Characteristics of SiO thin films deposited by atmospheric pressure chemical vapor deposition using a double-discharge system

Atmospheric pressure plasmas for surface modification of flexible and printed electronic devices: A review

“…[13] A Resistivity (ρ) of three inkjet printed silver nanoparticle inks after argon plasma sintering at atmospheric pressure or low pressure and after thermal sintering for different sintering time [57].…”

“…By using a multi-pin shaped, instead of a planar, electrode as the power electrode, a higher plasma density was obtained for the simple parallel plate DBD source and the remote DBD source shown in Figures 1(d) and (e), respectively, due to the concentration of the electric field near the tip area [10][11][12]. A double-discharge system composed of direct DBDs and remote DBDs was also investigated to improve the plasma density and gas dissociation, and to provide ion bombardment at the substrate [13][14].…”

“…However, remote AP-DBD systems typically provide low deposition rates even when modified for higher plasma densities as in Figure 1(e). Therefore, a double-discharge DBD system has been proposed [13]; it is composed of a combined remote DBD and direct DBD source (grounded for a remote DBD In the double-discharge DBD system, Gil et al [14] demonstrated that the direct DBD formed on the substrate has a significant influence on the smoothness and hardness of SiO x thin films deposited on silicon wafers as shown in Figure 35 and 36(a), respectively. The hardness of the SiO x thin film was measured using a commercially available nanoindentation instrument (MTS, Nano-indenter II) with a normal load of 30 mN.…”

“…32) as a function of the HMDS flow rate for the conditions listed inFigure 33. The substrate was grounded for a remote DBD configuration or AC biased at 5 kV (20 kHz) for the double-discharge configuration [13]. …”

Low‐Temperature Atmospheric Pressure Plasma Processes for “Green” Third Generation Photovoltaics

“…Very likely, this impacts and generally prevents the possibility of utilizing ion bombardment at atmospheric pressure, which is in many cases beneficial for the properties of thin films. However, ion bombardment at atmospheric pressure is still in discussion and there maybe conditions at which this could be enhanced and exploited for the optimization of film properties . While low‐pressure plasma all tend to maintain a low‐temperature, APPs offer opportunities to vary the gas temperature from room temperature to high temperatures which can be used for localized surface post‐treatment in the form of annealing of the thin film .…”