The structural properties of Al doped ZnO films depending on the thickness and their effect on the electrical properties

Tribovoltaic Device Based on the W/WO3 Schottky Junction Operating through Hot Carrier Extraction

“…The highest current was observed for the thinnest 70 nm-thick film. This is expected because the thinner films provide a shorter path for charge carrier transfer, thus decreasing the probability of their scattering . The charge carrier scattering can be caused by lattice vibrations, grain boundaries, and ionized point defects .…”

Effect of RF sputtering power and vacuum annealing on the properties of AZO thin films prepared from ceramic target in confocal configuration

“…The presence of compressive stresses has been previously reported for intrinsic and doped ZnO films deposited by RF magnetron sputtering by K.H. Ri et al [15]. The calculated average crystallite size is found to be 29.28, 15.65, 10.1 and 15.89 nm for the AZO samples grown at 50, 100, 200 and 300 W, respectively.…”

Structural-crossover-induced optical band gap variation of Hf-doped ZnO films

“…To achieve stability and improved electrical and optical properties, proper doping of the ZnO host material is thought to be the most promising method [4][5][6]. Many recent studies have identified appropriate dopants such as group III elements (for example, Al, Ga, In) [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25], group IV elements (for example, Ti, Zr, Hf) [26][27][28][29][30][31][32][33] and group V elements (for example, P, N) [34,35] to obtain the desired properties and understand their microscopic role in the physical properties. In particular, ZnO doped with group IV impurities is reportedly stable in highly active hydrogen environments at elevated temperatures [26][27][28][29][30][31][32][33].…”