Tribovoltaic Device Based on the W/WO<sub>3</sub> Schottky Junction Operating through Hot Carrier Extraction

Šutka, Andris; Zubkins, Mārtiņš; Linarts, Artis; Lapčinskis, Linards; Mālnieks, Kaspars; Verners, Osvalds; Šarakovskis, Anatolijs; Gržibovskis, Raitis; Gabrusenoks, J.; Strods, Edvards; Šmits, Krišjānis; Vibornijs, Viktors; Bikse, Liga; Purans, Juris

doi:10.1021/acs.jpcc.1c04312

Cited by 16 publications

(15 citation statements)

References 44 publications

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“…Recently, tribovoltaic devices based on W/WO 3 Schottky junction was proposed to improve the lifetime of TVNG with the value of >1000 cycles. [ 29 ] TVNG based on MXene‐silicon heterojunctions was proposed, which can reach a high output peak current of 22 µA, as well as the enhanced lifetime of over 1800 cycles. [ 30 ] In addition, macro‐superlubric TVNG can operate stably for nearly 10 000 cycles.…”

Section: Introductionmentioning

confidence: 99%

Simultaneously Enhancing Direct‐Current Density and Lifetime of Tribovotaic Nanogenerator via Interface Lubrication

Qiao

Zhao

Zhou

et al. 2022

Adv Funct Materials

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Tribovoltaic nanogenerators (TVNGs) present great properties such as high direct‐current density and continuous output performance, which has great potential to solve the power supply problem for miniaturized electronic devices. However, the severe wear problem of TVNG causes rapid attenuation of current density, which is difficult to realize long‐term operation with high output. In this work, an effective strategy via interface lubrication is proposed to enhance the direct‐current density and lifetime of TVNGs simultaneously. The water‐based graphene oxide solution is utilized as a lubricant, which can increase the sliding surface carriers to enhance current density, and reduce the wear between the copper and the silicon wafer surface due to its excellent lubrication performance. Hence, the TVNG can generate peak current density output ≈775 mA m−2, accompanied with 31 mC m−2 transfer charges density. The TVNG via interface lubrication can maintain high current output after 30 000 cycles. In addition, it can combine with triboelectric nanogenerator to constitute a dual‐type signal sensor, which can be used to monitor bridge vibration and goods’ weight. This study provides an effective method to solve the wear problem of TVNG and improve direct‐current density simultaneously, which will accelerate the practical application of TVNGs in the future.

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Section: Introductionmentioning

confidence: 99%

Simultaneously Enhancing Direct‐Current Density and Lifetime of Tribovotaic Nanogenerator via Interface Lubrication

Qiao

Zhao

Zhou

et al. 2022

Adv Funct Materials

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“…The tribo-thermoelectric and tribovoltaic coupling effect has also been reported by rubbing a metal on a semiconductor. ,, The friction induces electron–hole pairs, as well as generates heat, which drives the carrier to move from the hot side toward the cold side. We have also demonstrated that hot electrons from contact friction may play a role in metal–semiconductor TV devices …”

Section: Introductionmentioning

confidence: 87%

“…In TV devices, conductors (metals, degenerated semiconductors, or carbon) and semiconductors (Si, , MoS 2 , , perovskite, TiO 2 , ZnO, WO 3 , and others , ) are slid or dragged across each other, generating charge from interfacial friction.…”

Section: Introductionmentioning

confidence: 99%

Tribovoltaic Performance of TiO₂ Thin Films: Crystallinity, Contact Metal, and Thermoelectric Effects

Šutka,

Ma̅lnieks,

Zubkins

et al. 2023

ACS Appl. Mater. Interfaces

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Tribovoltaic devices are attracting increasing attention as motion-based energy harvesters due to the high local current densities that can be generated. However, while these tribovoltaic devices are being developed, debate remains surrounding their fundamental mechanism. Here, we fabricate thin films from one of the world’s most common oxides, TiO2, and compare the tribovoltaic performance under contact with metals of varying work functions, contact areas, and applied pressure. The resultant current density shows little correlation with the work function of the contact metal and a strong correlation with the contact area. Considering other effects at the metal–semiconductor interface, the thermoelectric coefficients of different metals were calculated, which showed a clear correlation with the tribovoltaic current density. On the microscale, molybdenum showed the highest current density of 192 mA cm–2. This work shows the need to consider a variety of mechanisms to understand the tribovoltaic effect and design future exemplar tribovoltaic devices.

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“…A similar phenomenon was also observed in tribovoltaic effect experiments of zinc oxide and tungsten oxide. [26,29] Moreover, the open-circuit voltage output of the SDC-TENG far exceeds that limited by the semiconductor bandgap. Previous mechanisms based on the built-in electric field and energy band theory have been difficult to be explained.…”

Section: Structure and Electric Output Characteristics Of Pbi 2 Te 3 ...mentioning

confidence: 99%

“…When the friction area is in the micro-or nanoscale, the SDC-TENG has ultrahigh current density (10 4 to 10 8 A m −2 ). [15,[20][21][22][23][24][25][26][27][28][29][30][31] A high power density (1000 W m −2 ) can be achieved under both a high velocity and a strong normal force. However, the actual output power of the SDC-TENG could not increase linearly with increasing area.…”

Section: Introductionmentioning

confidence: 99%

Semiconductor Contact‐Electrification‐Dominated Tribovoltaic Effect for Ultrahigh Power Generation

et al. 2022

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The semiconductor direct‐current triboelectric nanogenerator (SDC‐TENG) based on the tribovoltaic effect is promising for developing a new semiconductor energy technology with high power density. Here, the first SDC‐TENG built using gallium nitride (GaN) and bismuth telluride (Bi2Te3) for ultrahigh‐power generation is reported. During the friction process, an additional interfacial electric field is formed by continuous contact electrification (CE), and abundant electron–hole pairs are excited and move directionally to form a junction current that is always internally from Bi2Te3 to GaN, regardless of the semiconductor type. The peak open‐circuit voltage can reach up to 40 V and the power density is 11.85 W m−2 (average value is 9.23 W m−2), which is approximately 200 times higher than that of previous centimeter‐level SDC‐TENGs. Moreover, compared to traditional polymer TENGs under the same conditions, the average power density is remarkably improved by over 40 times. This study provides the first evidence of CE on the tribovoltaic effect and sets the normalized power density record for TENGs, which demonstrates a great potential of the tribovoltaic effect for energy harvesting and sensing.

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Tribovoltaic Device Based on the W/WO₃ Schottky Junction Operating through Hot Carrier Extraction

Cited by 16 publications

References 44 publications

Simultaneously Enhancing Direct‐Current Density and Lifetime of Tribovotaic Nanogenerator via Interface Lubrication

Simultaneously Enhancing Direct‐Current Density and Lifetime of Tribovotaic Nanogenerator via Interface Lubrication

Tribovoltaic Performance of TiO₂ Thin Films: Crystallinity, Contact Metal, and Thermoelectric Effects

Semiconductor Contact‐Electrification‐Dominated Tribovoltaic Effect for Ultrahigh Power Generation

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Tribovoltaic Device Based on the W/WO3 Schottky Junction Operating through Hot Carrier Extraction

Cited by 16 publications

References 44 publications

Simultaneously Enhancing Direct‐Current Density and Lifetime of Tribovotaic Nanogenerator via Interface Lubrication

Simultaneously Enhancing Direct‐Current Density and Lifetime of Tribovotaic Nanogenerator via Interface Lubrication

Tribovoltaic Performance of TiO2 Thin Films: Crystallinity, Contact Metal, and Thermoelectric Effects

Semiconductor Contact‐Electrification‐Dominated Tribovoltaic Effect for Ultrahigh Power Generation

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Product

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Tribovoltaic Device Based on the W/WO₃ Schottky Junction Operating through Hot Carrier Extraction

Tribovoltaic Performance of TiO₂ Thin Films: Crystallinity, Contact Metal, and Thermoelectric Effects