The structural, microstructural and thermoelectric properties of Mg2Si synthesized by SPS method under excess Mg content conditions

Nieroda, Paweł; Koleżyński, Andrzej; Leszczyński, Juliusz; Nieroda, Jolanta; Pasierb, P.

doi:10.1016/j.jallcom.2018.10.064

Cited by 18 publications

(5 citation statements)

References 54 publications

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“…Figure 6 shows the variations of the carrier concentration ( n ), Hall mobility ( μ ), and resistivity ( ρ ) with the annealing temperature. The carrier concentration of these films is about three orders of magnitude lower than that of Mg 2 Si bulk (1.88 × 10 19 cm −3 ), [ 31 ] but just is similar to the concentration of Mg 2 Si reported by Nieroda et al ( n = 9.0 × 10 16 cm −3 ), [ 25 ] Morris et al [ 32 ] (8.0 × 10 16 cm −3 ), and Heller et al [ 33 ] (7.4 × 10 16 cm −3 ). It was found that the carrier concentration decreases significantly with the increase in annealing temperature.…”

Section: Resultssupporting

confidence: 83%

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The Degradation Mechanism of Mg₂Si during Exploitation at High Temperature

Liao

Xie

et al. 2021

Physica Status Solidi (b)

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Oxidized Mg2Si films are annealed in low vacuum at various annealing temperature, and the degradation mechanism of Mg2Si during exploitation at high temperature is investigated. The crystal structure, surface morphology, depth profile, Raman scattering, and electrical properties are measured by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X‐ray photoelectron spectroscopy (XPS), Raman spectroscopy, and Hall effect system, respectively. XRD results show that MgO exists apparently in Mg2Si films, and as the annealing temperature increases, the content of MgO increases. The surfaces of films present distinct hexagon structures. The results of depth profiles show that the oxygen content decreases gradually from the surface to the subsurface. Raman spectroscopy analysis suggests that as the annealing temperature increases, the intensity of MgO peak enhances gradually. Hall measurement results indicate that the carrier concentration and mobility decrease significantly with the increase in annealing temperature. The films show n‐type at lower annealing temperature, while they present p‐type at higher annealing temperature, which indicates obvious conversions from n‐ to p‐type.

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Section: Resultssupporting

confidence: 83%

“…No obvious peak of SiO x compound was detected, which is consistent with the results reported by Galkin and Nieroda. [ 24,25 ]…”

Section: Resultsmentioning

confidence: 99%

The Degradation Mechanism of Mg₂Si during Exploitation at High Temperature

Liao

Xie

et al. 2021

Physica Status Solidi (b)

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“…Mg 2 Si is an attractive channel material due to its many advantages, such as being an environmentally friendly material, high carrier mobility, and compatibility with existing CMOS processes. [7][8][9][10] For gate dielectric materials of TFTs, high dielectric constant (high k) is one of the necessary conditions, because the higher capacitance can reduce the effect of interface traps, thus reducing the operating voltage of the device. 11 The high k gate dielectric must act as a barrier to both electrons and holes, that is, the desired >1-eV band offset to reduce the gate leakage current, which is one of the most important physical parameters in a given heterojunction.…”

Section: Introductionmentioning

confidence: 99%

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg₂Si and SiO₂/Mg₂Si heterojunctions

Liao

Xie

Xiao

et al. 2021

Surface & Interface Analysis

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MgO and SiO2 are the natural oxide layer on the surface of Mg2Si and the excellent gate dielectric layer materials. MgO/Mg2Si and SiO2/Mg2Si heterojunctions were successfully prepared by magnetron sputtering. The valence band offset (VBO) and conduction band offset (CBO) of the two heterojunctions were measured by X‐ray photoelectron spectroscopy (XPS) method, and the values were 2.64 and 3.90 eV for MgO/Mg2Si and 3.24 and 4.43 eV for SiO2/Mg2Si, respectively. Different degree of band bending occurs on the two interfaces. As a result, the band diagrams of the both interfaces are all Type‐I (Straddled) band alignment. Such high VBO and CBO can provide suitable barrier heights for both electrons and holes (>1 eV); therefore, both MgO and SiO2 can be suitable candidates for the preparation of Mg2Si‐based thin film transistors.

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“…They study the kinetics and mechanism of diffusion [98,99]. Additionally, the research related to the development of materials such as compounds with the perovskite structure [100,101], composite, including carbon-metal oxide systems [102], thermoelectric materials [103], and materials with catalytic properties [101], is performed. Also, the topics related to the materials, including transition metal oxides in the form of micro-and nanomaterials and thin layers, for the various applications, such as anodes for photoelectrochemical cells (PEC) [104][105][106], and semiconductor gas sensors [107,108] are explored.…”

Section: Agh University Of Science and Technologymentioning

confidence: 99%

Electrochemistry at Krakowian research institutions

Skibińska

Żabiński

2023

J Solid State Electrochem

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The electrochemistry research team activity from Poland is marked by significant increase in the last 20 years. The joining of European Community in 2004 gives an impulse for the development of Polish science. The development of electrochemistry has been stimulated by cooperation with industry and the establishment of technology transfer centers, technology parks, business incubators, etc. and the mostly by simplified international collaborations. Five research institutions from Krakow reports work in the field of electrochemistry. The achievements of all teams are briefly described.

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The structural, microstructural and thermoelectric properties of Mg2Si synthesized by SPS method under excess Mg content conditions

Cited by 18 publications

References 54 publications

The Degradation Mechanism of Mg₂Si during Exploitation at High Temperature

The Degradation Mechanism of Mg₂Si during Exploitation at High Temperature

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg₂Si and SiO₂/Mg₂Si heterojunctions

Electrochemistry at Krakowian research institutions

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The structural, microstructural and thermoelectric properties of Mg2Si synthesized by SPS method under excess Mg content conditions

Cited by 18 publications

References 54 publications

The Degradation Mechanism of Mg2Si during Exploitation at High Temperature

The Degradation Mechanism of Mg2Si during Exploitation at High Temperature

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg2Si and SiO2/Mg2Si heterojunctions

Electrochemistry at Krakowian research institutions

Contact Info

Product

Resources

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The Degradation Mechanism of Mg₂Si during Exploitation at High Temperature

The Degradation Mechanism of Mg₂Si during Exploitation at High Temperature

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg₂Si and SiO₂/Mg₂Si heterojunctions