The strain model of misfit dislocations at Ge/Si hetero-interface

Zhao, Chunwang; Dong, Zhaoshi; Shen, Jiajie

doi:10.1016/j.vacuum.2021.110711

Cited by 6 publications

(3 citation statements)

References 28 publications

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“…Then, the big internal compressive stress can be induced from the large expansion along the x direction. According to the misfit dislocation strain model, the strain of the electroplated Ni coating along the x direction is as follows [ 29 ]:

where

is the strain along the x direction, b is the Burgers vector, ς is the half width of the misfit dislocation core, y and x are the rectangular coordinates centered on the position of the dislocation core and a is the variable factor that makes the dislocation width variable. According to Equation (5), as the Ni coating grows, the volume expansion strain along the x direction will increase progressively.…”

Section: Resultsmentioning

confidence: 99%

Solving the Bonding Problem of the Ni Thin Coating with the Ultrasonic Assisted Electrochemical Potential Activation Method

Zhao

Huo

Li³

2022

Micromachines

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Electroplating nanocrystallite Ni coating can improve the mechanical properties of the metal structure surface, which is widely used in fabricating metal MEMS devices. Because of the large internal compressive stress caused by the oxidation layer of the substrate surface, the Ni coating easily falls off from the substrate surface. To solve this bonding problem, the ultrasonic assisted electrochemical potential activation method was applied. The ultrasonic experiments have been carried out. The bonding strength was measured by the indentation method. The substrate surface oxygen element was tested by the X-ray photoelectron spectroscopy (XPS) method. The dislocation was observed by the TEM method. The compressive stress was tested by the XRD method. The coating surface roughness Ra was investigated by the contact profilometer method. The results indicated that the ultrasonic activation method can remove the oxygen content of the substrate surface and reduce the dislocation density of the electroplating Ni coating. Then, the compressive stress of the electroplated Ni coating has been reduced and the bonding strength has been improved. From the viewpoint of the compressive stress caused by the oxygen element of the substrate surface, mechanisms of the ultrasonic activation method to improve the bonding strength were researched originally. This work may contribute to enhancing the interfacial bonding strength of metal MEMS devices.

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Section: Resultsmentioning

confidence: 99%

Solving the Bonding Problem of the Ni Thin Coating with the Ultrasonic Assisted Electrochemical Potential Activation Method

Zhao

Huo

Li³

2022

Micromachines

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“…Increasing the Ge content in a composition may be beneficial due to its stability and improved performance [7]. Additionally, SiGe alloy MOSFET stressors are utilized to induce strain into the Si and Ge channels [8]. The production of nanocomposites is a viable method for lowering SiGe alloys' lattice thermal conductivity [9].…”

Section: Introductionmentioning

confidence: 99%

“…It has been reported that lower deposition temperatures are more effective in improving carrier lifetimes when compared to higher temperatures due to less substantial degradation of Si characteristics [10]. CdTe solar cells have been found to exhibit reduced efficiency with increasing temperature, while mcSi and Si modules have been shown to have higher efficiency when compared to CdTe solar cells [4][5][6][7][8][9][10][11]. Moreover, SiGe thin film is well-known for its higher transparency and exhibits superior photo-electrical properties for future transparent solar cells.…”

Section: Introductionmentioning

confidence: 99%

Composition Dependence Structural and Optical Properties of Silicon Germanium (SiχGe1−χ) Thin Films

Nasir

Chee²,

Ghosh

et al. 2023

Crystals

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This study investigates the structural and optical characteristics of Silicon Germanium (SiGe) thin films with varying compositions and annealing temperatures for potential use in electronic and optoelectronic devices. Si0.8Ge0.2 and Si0.9Ge0.1 films were deposited onto a high-temperature quartz substrate and annealed at 600 °C, 700 °C, and 800 °C before being evaluated using an X-Ray Diffractometer (XRD), Atomic Force Microscopy (AFM), and a UV-Vis Spectrometer for structural and optical properties. The results show that increasing the annealing temperature results in an increase in crystalline size for both compositions. The transmittance for Si0.8Ge0.2 decreases slightly with increasing temperature, while Si0.9Ge0.1 remains constant. The optical band gap for Si0.9Ge0.1 thin film is 5.43 eV at 800 °C, while Si0.8Ge0.2 thin film is 5.6 eV at the same annealing temperature. XRD data and surface analysis reveal significant differences between the band edges of SiGe nano-structure materials and bulk crystals. However, the possibility of a SiGe nano-crystal large band gap requires further investigation based on our study and related research works.

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Interaction between dislocation and heterogeneous interface in Cu/Fe laminated composites based on discrete dislocation dynamics

Peng,

Zheng,

Muraishi

et al. 2024

Materialia

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The strain model of misfit dislocations at Ge/Si hetero-interface

Cited by 6 publications

References 28 publications

Solving the Bonding Problem of the Ni Thin Coating with the Ultrasonic Assisted Electrochemical Potential Activation Method

Solving the Bonding Problem of the Ni Thin Coating with the Ultrasonic Assisted Electrochemical Potential Activation Method

Composition Dependence Structural and Optical Properties of Silicon Germanium (SiχGe1−χ) Thin Films

Interaction between dislocation and heterogeneous interface in Cu/Fe laminated composites based on discrete dislocation dynamics

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