The spin-polarized dwell time in a parallel double δ-magnetic-barrier nanostructure

Controllable temporal spin splitter via δ-doping in parallel double δ-magnetic-barrier nanostructure

“…Figure 3(a) exhibits the relationship between the spin-polarization ratio (P t ) and incident energy (E) for several δ-doping weights: V = 0.0 (solid curve), 1.0 (dashed curve) and 2.0 (dotted curve), where the δ-doping's position remains unchanged, such as x 0 = 1.0. When V = 0.0 (red curve), i.e., without a δ-doping in the MCSH, one can see an obvious spin-polarized dwell time, as confirmed previously in [34]. When a δ-doping is introduced inside (V 0 ̸ = 0.0, green and blue curves), a considerable spin-polarization effect of the dwell time still exists as shown in figure 2; however, the spin-polarized dwell time is altered greatly.…”

“…For InAs, g * = 15 and m * = 0.024m 0 , which gives ℓ B = 81.3 nm, E 0 = 0.48 meV and τ 0 = 1.39ps for a typical magnetic field B 0 = 0.1 T. In numerical calculations, we take B = 2.0, L = 1.5, U 0 = 6.0 and k y = 0.7 for simplicity. In a previous investigation [34], we demonstrated that electron spins are separated in time dimension and the considered MCSH (see figure 1) can be employed as a temporal spin splitter. Now, we introduce a δ-doping into the device using atomic-layer doping technology, to study manipulation of this temporal spin splitter.…”

“…With the help of H.G. Winful's theory, we calculated the dwell time for electrons in a parallel double δ-magnetic-barrier (MB) nanostructure [31][32][33], and demonstrated that electron spins are separate by dwell time, and as such a MCSH can be used as a temporal time splitter for realizing spin injection into a semiconductor [34]. A controllable spin-polarized source is desired for spintronics applications [35].…”

Manipulation of a temporal electron-spin splitter via a δ-potential in an embedded magnetic-electric-barrier microstructure

“…On top of this work, the dwell time for an electron in another realistic MB microstructure and parallel magnetic-electric-barrier microstructure (PMEBM) were explored by Guo et al [25] and Lu et al [26], respectively. Chen et al [27,28] and Zhang et al [29] studied the dwell time of an electron in parallel and antiparallel double δ-MB microstructures, respectively. These research studies demonstrated that dwell time depends on electron spins because of the interaction between spins and structural magnetic fields in MMSM.…”