The solubility and trapping of hydrogen in vanadium

Chang, H. Y.; Wert, Charles

doi:10.1016/0001-6160(73)90164-8

Cited by 101 publications

(20 citation statements)

References 15 publications

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“…Dissolved O has been shown to increase the solubility limit for H in Nb and V [168][169][170][171][172], and this can attributed to clustering of H around the interstitial impurity, however, the trapping effect of O can lead to a decrease in H diffusivity and permeability [173,174], particularly at lower temperatures [175]. Non-metallic impurities can also inhibit hydride precipitation [176], and thus are beneficial from the perspective of reducing the likelihood of hydride-related fracture.…”

Section: Effect Of Impurity Species On Membrane Performancementioning

confidence: 99%

Non-Pd BCC alloy membranes for industrial hydrogen separation

Dolan

2010

Journal of Membrane Science

247

152

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Section: Effect Of Impurity Species On Membrane Performancementioning

confidence: 99%

Non-Pd BCC alloy membranes for industrial hydrogen separation

Dolan

2010

Journal of Membrane Science

247

152

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“…We note as an aside that this value is very close to the 0.14 eV determined for C-H interactions in V from experiments by Chang and Wert. 37 Since the adjacent octahedral sites offer the maximal interaction between H and impurity atoms, our study of the impact of impurities on absorption will be focused on the Figure 7a(ii) configuration, in which the H and the impurity are thus located.…”

Section: Trapping Ofh At Point-defects In the Lattice: Vacancies And mentioning

confidence: 99%

Ab-initio calculations of the hydrogen–uranium system: Surface phenomena, absorption, transport and trapping

Taylor

Lillard

2009

Acta Materialia

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Density functional theory calculations have recently been validated for a-uranium (a-V) metal and, in this work, applied to the initial steps of uranium hydriding: surface phenomena, absorption into the bulk, bulk transport (diffusion) and trapping at defect sites. We investigate the surface chemistry of hydrogen (H) on the (001) surface of a-V, and the influence of high-coordinate geometries on H2 adsorption and dissociation on the metal surface. In the adsorbed state H already has a partially ionic character. Although H adsorbs exothermically to the (001) surface, with respect to the reference state of H 2 , we find that it is endothermic to absorb H into the bulk, with off-center octahedral absorption (Le. a square-pyramidal coordination ofH in the lattice) having the lowest absorption energy of 0.39 eV relative to molecular H2. H absorption in interstitial sites is calculated to cause a local softening of the bulk modulus. The diffusion barrier for H in unstrained a-V is calculated to be 0.6 eV. The energy of H absorption in a site adjacent to the chemical impurities C, S, Si was lowered by an amount proportional to the atomic radii of the impurity atom, and the resulting lattice strain Si > S > C. Thus, impurities may promote hydriding by providing surfaces or pre-strained zones for H uptake.

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“…The value of NT is shown in Table 3. The solubility of deuterium in V-D and V-D-O alloys may be expressed as (2) where A and Hs are 102 and 0.20 eV, respectively (see Fig. 5), and Fig.…”

Section: Binding Energy Of Deuterium To Oxygenmentioning

confidence: 99%