The significant role of ZnSe layer thickness in optimizing the performance of ZnSe/CdTe solar cell for optoelectronic applications

Elsaeedy, H.I.; Hassan, Abeer A.; Yakout, H.A.; Qasem, Ammar

doi:10.1016/j.optlastec.2021.107139

Cited by 31 publications

(8 citation statements)

References 35 publications

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“…In fact, when the recombination speed increases, the diode acts like a resistor, hindering the flow and passage of current [32][33][34][35][36]. The integration and interdependence in the properties of chalcogenide compounds, or those that contain at least a chalcogen element, or that are based in their synthesis on silicon and transitional elements, were received extensive studies, as the optical and electrical properties have been employed to determine the suitability of these systems for photovoltaic applications, especially for various uses in solar cells [37][38][39][40][41][42], optoelectronics [43][44][45][46][47][48][49][50][51][52][53][54][55][56], and electrodes [57][58][59][60]. Based on these studies, our current study was a link between the theoretical and experimental parts of the different system compositions of the studied solar cells.…”

Section: (I-v) and (P-v) Data As A Function Of The Solar Irradiance ψmentioning

confidence: 99%

Exceptional and innovational analysis of n-CdS/p-Si solar cells based on software packages and bias point models: insights into theoretical and experimental characteristics of fabricated solar cells

Hassan¹,

Al‐nami²,

Alrafai³

et al. 2023

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The characteristics of a single solar cell made by CdS thin film deposition on a silicon glass substrate were estimated using simulation models in this study. An aluminum electrode was attached to a silicon wafer to produce a heterojunction, and the indium fingers were fashioned into another electrode and connected directly to the CdS layer. Simulation steps were performed using PV*SOL 3.0 software package and bias points (ISC, VOC ) models. In addition to the use of advanced programs such as MATLAB software (Shell SQ150 PV module), Mathcad 2000 program, and Origin Lab 2019 program.Simulation programs for extracting photovoltaic parameters have been executed together with the laboratory procedures. The simulation programs and experimental procedures aimed in general to know the (current-voltage) and (power-voltage) characteristics of the studied single-diode photovoltaic.

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Section: (I-v) and (P-v) Data As A Function Of The Solar Irradiance ψmentioning

confidence: 99%

Exceptional and innovational analysis of n-CdS/p-Si solar cells based on software packages and bias point models: insights into theoretical and experimental characteristics of fabricated solar cells

Hassan¹,

Al‐nami²,

Alrafai³

et al. 2023

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“…in the low voltage region, is lower than the exponential behavior of the forward current in the same region. As a result, the fabricated solar cell can be said to have exceptional rectification characteristics [76][77][78]. The open-circuit voltage OC V and the short-circuit current SC J are determined from Fig.…”

Section: The Pathway Of (Current-voltage) Dependencementioning

confidence: 99%

Studying the structural, optical spectroscopic ellipsometry and electrical properties of variable-CdS thickness/CdTe for solar cell applications

Sebak¹,

Ghalab²,

El-Taher³

et al. 2022

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"The structural and optical properties of CdS window layer at different thicknesses in the range of (100-300 nm) deposited on pre-cleaned glass substrates (CdS/glasses) via the thermal evaporation process are studied in the current work. The structural analysis is done using Rietveld refinement and atomic pressure microscope techniques. The films of CdS/glass showcase a wurtzite behavior. XRD and AFM tests are confirmed that the structural parameters improve as the thickness of the CdS-layer increases. The optical constants (the refractive index n, the extinction coefficient, k and the bandgap energy values are estimated from spectroscopic ellipsometry (SE) via the construction of an optical model. The refractive index of the CdS/glass films increases with the increase of CdS-layer thickness. This, in turn, is due to the rise of the size of the crystal in the thin layers. It is also found that as the thickness of the CdS-layer rises, so does the overall behavior of the extinction coefficient. Additionally, the bandgap energy of the direct transition decreases from 2.45 eV (d=100 nm) to 2.25 eV (d=300 nm). The dark and illumination I-V photovoltaic characteristics of fabricated devices are explored by depositing a p-CdTe thin layer (500 nm) over varying thicknesses of CdS thin films (100- 300 nm) prepared on glass substrates (2 mm) and thus, the Ni/n-CdS/i-AgSe/p-CdTe/Pt heterojunction has been successfully fabricated with an AgSe buffer layer deposited directly on the p-CdTe absorber laryer. The n-CdS window layer is deposited on i-AgSe buffer layer. In dark conditions, based on the dependence of the forward and reverse current-voltage, the essential behavior related to the fabricated diode has been determined. As well, in the illumination case, the open-circuit voltage, the short-circuit current, the fill factor, the power conversion efficiency, (PCE), photoresponsivity, quantum efficiency, dependence of generated photocurrent on the light intensity, dependence of the generated photocurrent on wavelength (λ)for the studied solar cell are computed and discussed."

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“…The compounds from II-VI groups are widely used in modern technologies due to their superior optoelectronic properties. [1][2][3] Among them, zinc selenide (ZnSe) has potential applications in many fields such as thin-film solar cells, thin-film transistors, photoelectrochemical cells, laser displays, red, blue-green light-emitting diodes, [4] etc., due to the high radiative recombination efficiency, absorption coefficient, quantum size effects, and direct bandgap (2.7 eV). ZnSe nanocrystalline energy band structure can be varied using the excellent size-dependent properties that influence the material's physical and chemical properties.…”

Section: Introductionmentioning

confidence: 99%

Monochromatic Photochemical Deposition and Characterization of ZnSe Thin Films

Pawar¹,

Lokhande²,

Kaur³

et al. 2022

ES Energy Environ.

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Zinc selenide (ZnSe) as an II-IV group has attracted attention as a binary semiconductor material due to its superior chemically stability than other semiconducting materials such as zinc sulphide (ZnS). In this work, ZnSe thin film was synthesized using a simple, clean and relatively inexpensive monochromatic photochemical synthesis method at room temperature. The structure of the ZnSe films deposited under different coloured illumination was confirmed by X-ray diffraction and the effect of the monochromatic light on the growth rate was observed. The scanning electron microscopy (SEM) result was demonstrated different morphology of the different films' surfaces, such as granular spherical, cauliflower, fiber, or wire, with a variety of porosity that was achieved by a simpler photochemical route. A change in the optical bandgap between 2.72 eV and 2.82 eV is observed for the red, green, blue, white light, and darkness conditions. And it is further reduced for samples annealed in the air for 2 hours at 100 °C, and 200 °C indicates improved crystallinity. The obtained result suggests that synthesized material can be used for photoelectrochemical solar cells.

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The significant role of ZnSe layer thickness in optimizing the performance of ZnSe/CdTe solar cell for optoelectronic applications

Cited by 31 publications

References 35 publications

Exceptional and innovational analysis of n-CdS/p-Si solar cells based on software packages and bias point models: insights into theoretical and experimental characteristics of fabricated solar cells

Exceptional and innovational analysis of n-CdS/p-Si solar cells based on software packages and bias point models: insights into theoretical and experimental characteristics of fabricated solar cells

Studying the structural, optical spectroscopic ellipsometry and electrical properties of variable-CdS thickness/CdTe for solar cell applications

Monochromatic Photochemical Deposition and Characterization of ZnSe Thin Films

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