The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence

Qi, Haoran; Zhang, S.; Liu, Song‐Tao; Liang, Feng; Luo, Yi; Huang, Jinli; Zhou, Mi; He, Zhongwei; Zhao, Degang; Jiang, Desheng

doi:10.1016/j.spmi.2019.106177

Cited by 8 publications

(8 citation statements)

References 22 publications

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“…This can be attributed to the Mg saturated concentration of about 2 × 10 19 /cm 3 . Furthermore, the low Mg concentration behavior presented in our samples is similar to that of other reported data [ 11 , 25 ] for a GaN:Mg hetero-epitaxial layer on a sapphire substrate, as shown in Figure 2 . However, they all showed constant reversion of the hole concentration after Mg saturation, owing to the self-compensation effect.…”

Section: Resultssupporting

confidence: 92%

“…When the Mg doping is turned on at 200 sccm, the native donor (VN) [4] and shallow Mg acceptor pair (DAP) emission dominates the PL spectrum, as it can be seen in Figure 3b. [11,25] are also plotted for comparison, as shown by blue circles, green circles, and orange triangles.…”

Section: Resultsmentioning

confidence: 99%

“…It is expected that a high Al composition could significantly suppress the self-compensation effect, reduce the Mg diffusion concentration, and further increase the hole concentration and activation rate. Many research groups also investigated the role of stable and metastable Mg-H complexes on the activation efficiency [7,8,25]. They discovered that the hole concentration is proportional to the density of H atoms from the Mg-H complex measured by SIMS before thermal annealing.…”

Section: Resultsmentioning

confidence: 99%

“…In contrast to the relationship, the total TDDs with AlN-IL slightly increased from 4.05 × 10 9 to 4.30 × 10 9 cm −2 , indicating that the TDDs do not dominate the hole concentration in this case. We recommend excluding the effect of Mg-H and TDDs on the increasing activation efficiency after the Mg doping concentration reaches Many research groups also investigated the role of stable and metastable Mg-H complexes on the activation efficiency [7,8,25]. They discovered that the hole concentration is proportional to the density of H atoms from the Mg-H complex measured by SIMS before thermal annealing.…”

Section: Resultsmentioning

confidence: 99%

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High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

Dai

Thu

et al. 2021

Nanomaterials

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The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp2Mg flow rate reached a maximum value of 2.22%. No reversion of the hole concentration was observed due to the existence of stress in the designed sample structures. This is attributed to the higher Mg-to-Ga incorporation rate resulting from the restriction of self-compensation under compressive strain. In addition, by using an AlN interlayer (IL) at the interface of p-GaN/AlGaN, the activation rate can be further improved after the doping concentration reaches saturation, and the diffusion of Mg atoms can also be effectively suppressed. A high hole concentration of about 1.3 × 1018 cm−3 can be achieved in the p-GaN/AlN-IL/AlGaN structure.

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Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

Dai

Thu

et al. 2021

Nanomaterials

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“…Thus, Mg atoms might incorporate at places different from the expected Ga sites, and could generate donors causing a self-compensation effect, which would yield to a reduction of hole concentration. Note that a compensating behavior has been observed in hexagonal III-nitrides grown by MBE 36 and MOCVD 37 . A model involving Mg-V N complex was proposed to explain the self-compensation in heavily Mg-doped p-type h-GaN 38 .…”

Section: Samples Preparation Cubic Gan Layers Were Grown By Plasma-amentioning

confidence: 80%

Study of the heavily p-type doping of cubic GaN with Mg

Hernández-Gutiérrez

Casallas-Moreno

Rangel-Kuoppa

et al. 2020

Sci Rep

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We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be used in bipolar devices. We simulated the Mg-doped GaN transport properties by density functional theory (DFT) to compare with the experimental data. Mg-doped GaN cubic epitaxial layers grown under optimized conditions show a free hole carrier concentration with a maximum value of 6 × 1019 cm−3 and mobility of 3 cm2/Vs. Deep level transient spectroscopy shows the presence of a trap with an activation energy of 114 meV presumably associated with nitrogen vacancies, which could be the cause for the observed self-compensation behavior in heavily Mg-doped GaN involving Mg-VN complexes. Furthermore, valence band analysis by X-ray photoelectron spectroscopy and photoluminescence spectroscopy revealed an Mg ionization energy of about 100 meV, which agrees quite well with the value of 99.6 meV obtained by DFT. Our results show that the cubic phase is a suitable alternative to generate a high free hole carrier concentration for GaN.

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Relevance of Substrate Temperature and Ga Kinetics on Mg Doping in GaN by Plasma-Assisted Molecular Beam Epitaxy

Akar,

Grenier,

Papon

et al. 2024

Crystal Growth & Design

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This study investigates the influence of substrate temperature and III/V ratio on the synthesis of Mg-doped GaN layer using plasma-assisted molecular beam epitaxy. We demonstrate that optimum growth conditions are the result of a delicate balance between substrate temperature, Mg flux, and III/V ratio. At low substrate temperatures, where Ga desorption from the growing surface is negligible, a pronounced self-compensation effect linked to polarity inversion significantly reduces net acceptor concentration at relatively low Mg cell temperatures. Increasing the substrate temperature allows for higher Mg fluxes, enhancing the net acceptor concentration before reaching the collapse due to polarity inversion. Detailed analysis of Ga desorption during growth interruptions highlights the susceptibility of the Ga bilayer to perturbations under varying Mg fluxes, attributed to the replacement of Ga adatoms by Mg. We demonstrate that the polarity inversion is triggered when the Ga bilayer is reduced to a monolayer, either by the influence of the Mg flux or by a reduction of the Ga flux. This study demonstrates that maintaining a substantial Ga excess, within the bilayer regime and close to the Ga droplet accumulation threshold, is vital for preventing polarity inversion.

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The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence

Cited by 8 publications

References 22 publications

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

Study of the heavily p-type doping of cubic GaN with Mg

Relevance of Substrate Temperature and Ga Kinetics on Mg Doping in GaN by Plasma-Assisted Molecular Beam Epitaxy

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