The roles of H and O atoms in diamond growth

Dementjev, A.P.; Petukhov, M.

doi:10.1016/s0925-9635(96)00695-4

Cited by 36 publications

(19 citation statements)

References 8 publications

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“…Several studies have reported enhanced growth rates or quality due to oxygen addition and, more importantly, the substrate temperature can be significantly lowered when oxygen is introduced into the hydrocarbon/H 2 gas mixtures [73][74][75][76][77][78].…”

Section: Effect Of Oxygen Additionmentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

244

156

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This paper reviews the growth of diamond by chemical vapour deposition (CVD). It includes the following seven parts: (1) Properties of diamond: this part briefly introduces the unique properties of diamond and their origin and lists some of the most common diamond applications. (2) Growth of diamond by CVD: this part reviews the history and the methods of growing CVD diamond. (3) Mechanisms of CVD diamond growth: this part discusses the current understanding on the growth of metastable diamond from the vapour phase. (4) Characterization of CVD diamond: we discuss the two most common techniques, Raman and XRD, which have been intensively employed for characterizing CVD diamond. (5) CVD diamond growth characteristics: this part demonstrates the characteristics of diamond nucleation and growth on various types of substrate materials. (6) Nanocrystalline diamond: in this section, we present an introduction to the growth mechanisms of nanocrystalline diamond and discuss their Raman features. This paper provides necessary information for those who are starting to work in the field of CVD diamond, as well as for those who need a relatively complete picture of the growth of CVD diamond.

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Section: Effect Of Oxygen Additionmentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

244

156

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“…22 Interactions of H atoms with graphite and diamond surfaces have also been reported in literature. Dementjev and Petukhov 30 used Auger electron spectroscopy to demonstrate that interaction of H atoms with a graphite surface at 300 K changes the hybridization of the C atoms from sp 2 to sp 3 . Balooch and Olander 31 observed that over a temperature range of 400-2200 K, H atoms etch graphite to form CH 4 and C 2 H 2 .…”

Section: Introductionmentioning

confidence: 99%

Atomic hydrogen interactions with amorphous carbon thin films

Jariwala

Ciobanu

Agarwal

2009

Journal of Applied Physics

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The atomic-scale interactions of H atoms with hydrogenated amorphous carbon ͑a-C:H͒ films were identified using molecular dynamics ͑MD͒ simulations and experiments based on surface characterization tools. Realistic a-C:H films developed using MD simulations were impinged with H atoms with a kinetic energy corresponding to a temperature of 700 K. The specific chemical reactions of the H atoms with the a-C:H surface were identified through a detailed analysis of the MD trajectories. The MD simulations showed that hydrogenation occurs primarily at the sp 2 sites and converts them to sp 3-hybridized C atoms. Depending on the hybridization of the next-nearest neighbor, a dangling bond may or may not be created. The hydrogenation reaction is highly exothermic, Ͼ2.5 eV, and proceeds with a negligible activation energy barrier via a mechanism similar to Eley-Rideal. In certain cases hydrogenation may also cleave a CC bond. The reaction events observed through MD simulations are consistent with the surface characterization of D-exposed a-C:H films using Raman spectroscopy, spectroscopic ellipsometry, and in situ attenuated total reflection Fourier-transform infrared spectroscopy.

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“…Second, as in the simulation, there is a clear shoulder on the lower binding energy side in the experiment. Note that the shoulder on the high binding energy side of the experimental spectrum (286-288 eV) is caused by C-O bonds [3,[54][55][56][57][58][59] in the near-surface region. The experimental C(1s) of undoped UNCD does not agree with the calculation for pure diamond.…”

Section: Resultsmentioning

confidence: 99%

Fermi level pinning by defects can explain the large reported carbon 1s binding energy variations in diamond

Walter,

Mangolini,

McClimon

et al. 2019

Preprint

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The quantitative evaluation of the carbon hybridization state by X-ray photoelectron spectroscopy (XPS) has been a surface-analysis problem for the last three decades due to the challenges associated with the unambiguous identification of the characteristic binding energy values for sp 2 and sp 3bonded carbon. While the sp 2 binding energy is well established, there is disagreement for the sp 3 value in the literature. Here, we compute the binding energy values for model structures of pure and doped-diamond using density functional theory. The simulation results indicate that the large bandgap of diamond allows defects to pin the Fermi level, which results in large variations of the C(1s) core electron energies for sp 3 -bonded carbon, in agreement with the broad range of experimental C(1s) binding energy values for sp 3 carbon reported in the literature. Fermi level pinning by boron is demonstrated by experimental C(1s) binding energies of highly B-doped ultrananocrystalline diamond that are in good agreement to simulations.

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The roles of H and O atoms in diamond growth

Cited by 36 publications

References 8 publications

Diamond growth by chemical vapour deposition

Diamond growth by chemical vapour deposition

Atomic hydrogen interactions with amorphous carbon thin films

Fermi level pinning by defects can explain the large reported carbon 1s binding energy variations in diamond

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