The role of the ion-solid interaction in ion-beam-induced deposition of gold

Dubner, A. D.; Wagner, Alfred; Melngailis, J.; Thompson, Carl V.

doi:10.1063/1.349671

Cited by 64 publications

(54 citation statements)

References 24 publications

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“…So far, almost all IBID work is performed with Ga + focused ion beams (FIB), which have at best a probe size of 5 nm [3]. Only a few studies deal with broad (∼mm) noble-gas ion beams, like He + , Ne + and Xe + [4,5]. Despite the small probe size, structures grown with a stationary FIB-i.e.…”

Section: Introductionmentioning

confidence: 99%

Nanopillar growth by focused helium ion-beam-induced deposition

Chen

Veldhoven²,

Sanford

et al. 2010

Nanotechnology

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A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH 3 ) 3 Pt(C P CH 3 ) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars grown at low beam currents are narrow and have sharp tips. For a constant dose, the pillar height decreases with increasing current, pointing to depletion of precursor molecules at the beam impact site. Furthermore, the diameter increases rapidly and the total pillar volume decreases slowly with increasing current.Monte Carlo simulations have been performed with realistic values for the fundamental deposition processes. The simulation results are in good agreement with experimental observations. In particular, they reproduce the current dependences of the vertical and lateral growth rates and of the volumetric deposition efficiency. Furthermore, the simulations reveal that the vertical pillar growth is due to type-1 secondary electrons and primary ions, while the lateral outgrowth is due to type-2 secondary electrons and scattered ions.

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Section: Introductionmentioning

confidence: 99%

Nanopillar growth by focused helium ion-beam-induced deposition

Chen

Veldhoven²,

Sanford

et al. 2010

Nanotechnology

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“…Low energy noble gas ion beams have been applied as an effective tool to modify surface structures and properties on various materials at the nanoscale [7][8][9][12][13][14][15]. Here we present ion beam sculpting results for a variety of noble gas ions and ion beam fluxes to drastically change some of the potentially relevant parameters of the process.…”

Section: Introductionmentioning

confidence: 99%

Nanopore sculpting with noble gas ions

Cai¹,

Ledden²,

Krueger

et al. 2006

Journal of Applied Physics

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We demonstrate that 3 keV ion beams, formed from the common noble gasses, He, Ne, Ar, Kr, and Xe, can controllably "sculpt" nanometer scale pores in silicon nitride films. Single nanometer control of structural dimensions in nanopores can be achieved with all ion species despite a very wide range of sputtering yields and surface energy depositions. Heavy ions shrink pores more efficiently and make thinner pores than lighter ions. The dynamics of nanopore closing is reported for each ion species and the results are fitted to an adatom diffusion model with excellent success. We also present an experimental method for profiling the thickness of the local membrane around the nanopore based on low temperature sputtering and data is presented that provides quantitative measurements of the thickness and its dependence on ion beam species.

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“…Dubner et al found that the deposition yield is proportional to the calculated stopping power and, consequently, explained IBID in terms of the energy transfer via a cascade of atom-atom collisions to adsorbed precursor molecules. 4,5 Chen et al measured different angular dependences of the deposition and sputtering yields, which suggests that IBID cannot be explained solely in terms of ion-solid interactions. 6 Lipp et al supported the secondary electron model, having observed a linear relationship between the deposition yield and the secondary electron yield within the ion energy range of 10-30 keV.…”

Section: 2mentioning

confidence: 99%

Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition

Chen¹,

Salemink²,

Alkemade³

2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The authors report the results of investigating two models for ion-beam-induced deposition ͑IBID͒. These models describe IBID in terms of the impact of secondary electrons and of sputtered atoms, respectively. The yields of deposition, sputtering, and secondary electron emission, as well as the energy spectra of the secondary electrons were measured in situ during IBID using ͑CH 3 ͒ 3 Pt͑C P CH 3 ͒ as functions of Ga + ion incident angle ͑0°-45°͒ and energy ͑5-30 keV͒. The deposition yield and the secondary electron yield have the same angular dependences but very different energy dependences. It was also found that the deposition yield per secondary electron is very high ͑ӷ10͒. However, within the investigated angle and energy ranges, the deposition yield is linearly related to the sputtering yield, the offset of which might be due to the contribution of primary ions. They conclude that the sputtered atom model describes IBID better than the secondary electron model.

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The role of the ion-solid interaction in ion-beam-induced deposition of gold

Cited by 64 publications

References 24 publications

Nanopillar growth by focused helium ion-beam-induced deposition

Nanopillar growth by focused helium ion-beam-induced deposition

Nanopore sculpting with noble gas ions

Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition

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