The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon

Rogers, W.B.; Massoud, Hisham Z.; Fair, Richard B.; Gösele, U.; Tan, T. Y.; Rozgonyi, G. A.

doi:10.1063/1.343303

Cited by 19 publications

(7 citation statements)

References 18 publications

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“…The excess interstitials generated during oxidation are known to retard the silicon oxide growth. 20 This is in agreement with the model proposed in the present letter.…”

supporting

confidence: 93%

Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

Kissinger

Morgenstern

Vanhellemont³

et al. 1998

Applied Physics Letters

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Fast pulled Czochralski silicon crystals usually contain large octahedral vacancy agglomerates. These voids are known as D defects, which degrade the integrity of thin gate oxides by causing time zero dielectric breakdown. After annealing the wafers at temperatures above 1100 °C, the gate oxide integrity is clearly improved. We show by theoretical estimation, light-scattering tomography and transmission electron microscopy studies that the vacancy agglomerates can be filled with silicon oxide by internal oxidation. This is brought about by diffusion of interstitial oxygen to the voids, which can be regarded as internal surfaces. In this way they become less detrimental for thin gate oxides, because now they consist of silicon oxide itself. However, they are still present in an octahedral-like geometry and can be observed by Brewster angle infrared light-scattering tomography.

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“…The excess interstitials generated during oxidation are known to retard the silicon oxide growth. 20 This is in agreement with the model proposed in the present letter.…”

supporting

confidence: 93%

Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

Kissinger

Morgenstern

Vanhellemont³

et al. 1998

Applied Physics Letters

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“…However, the defects revealed by SIRM ( figure 6) appear frequently as short lines at an angle of 60 • from each other, and can be identified as stacking faults induced by oxidation [4,15,32], as confirmed by defect etching.…”

Section: Discussionmentioning

confidence: 79%

“…The centres could be due to surface states between the precipitates and the host matrix, or to associated extended defects or also to trapped metallic impurities [13]. In addition their reaction with point defects, especially with interstitial silicon atoms, is not well understood, although papers have been published on this subject [14,15].…”

Section: Introductionmentioning

confidence: 99%

The Stable Rationality of Quotient Spaces for Simply Connected Groups

Bogomolov¹

1987

Math. USSR Sb.

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Non-destructive techniques such as scanning infrared microscopy (SIRM), Fourier transform infrared spectroscopy (FTIR), light-beam-induced current (LBIC) mapping and diffusion length (L n ) measurement techniques, associated with chemical etching were used to detect precipitates in annealed Czochralski (Cz) silicon wafers and to control their interaction with self-interstitials injected into the bulk by phosphorus diffusion or by oxidation. The effect of metallic contamination was also studied by copper diffusion. After nucleation (750 • C) and/or growth (900 • C) annealings phosphorus diffusion at 900 • C for 4 h shrinks the precipitates revealed by SIRM. This shrinkage is due to a marked injection of self-interstitials in the bulk. Annealing of the two-step annealed samples in oxygen produces a similar effect. However, new defects are detected by SIRM, defects which are identified as stacking faults.

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“…Consequently there will be a supersaturation of self-interstitia]s, and/or an undersaturation of vacancies. The supersaturation of self-interstitials due to oxygen precipitation have been shown by Hu (36) and Rogers et al (37,38) to feed the growth of preexisting OSF.…”

Section: The Dual Yacancv-lnterstitialcy Mechanism Of Diffust%n: a Pementioning

confidence: 90%

“…[32] and [33] J_,~i + . [L = 0 [37] The participation of the vacancy has been neglected. Not included is an integration constant which is a function of time only.…”

Section: D~ ~ 1)a1~~ ~ Dukaicrmentioning

confidence: 99%

Vacancies and Self‐Interstitials in Silicon: Generation and Interaction in Diffusion

1992

J. Electrochem. Soc.

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Overwhelming evidence has been accumulated since 1974 that diffusion in silicon takes place via a dual vacancy‐interstitialcy mechanism. Most of the ensuing discoveries of new phenomena and the further sophistication of the dual vacancy‐interstitialcy diffusion model are related to nonequilibrium point defects. Many sources of excess silicon interstitials and excess vacancies have been discovered; but the mechanisms of defect generation, particularly by surface sources, have remained unresolved issues. We discuss in some detail two areas that are very important in diffusion modeling, but have not been well understood; the relationship between the concentrations of vacancies and interstitials under nonequilibrium conditions, and the chemical pump and the vacancy wind phenomena. We also discuss the interactions between point defects and oxygen precipitation and their implications.

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The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon

Cited by 19 publications

References 18 publications

Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

The Stable Rationality of Quotient Spaces for Simply Connected Groups

Vacancies and Self‐Interstitials in Silicon: Generation and Interaction in Diffusion

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