The role of gas-phase dynamics in interfacial phenomena during few-layer graphene growth through atmospheric pressure chemical vapour deposition

Fauzi, Fatin Bazilah; Ismail, Edhuan; Bakar, Syed Noh Syed Abu; Ismail, Ahmad Faris; Mohamed, Mohd Ambri; Din, Muhamad Faiz Md; Illias, Suhaimi; Ani, Mohd Hanafi

doi:10.1039/c9cp05346h

Cited by 16 publications

(17 citation statements)

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“…Specifically, the boundary layer dictates the diffusion of species from bulk gas flow toward the surface, namely, δ determines the transport rate and mean diffusion time. [127] Given that mass transport is the rate-limiting step for graphene growth by APCVD, the boundary layer is a crucial factor for controlling the graphene uniformity, in contrast to the surface-reaction-limited case for low pressure CVD (LPCVD). [108,114] In fact, process parameters and reactor configurations can modify the boundary layer throughout altering the flow velocity distribution, further influencing the film uniformity.…”

Section: Description Of Gas-phase Dynamicsmentioning

confidence: 99%

“…The gas‐phase region (bulk region and boundary layer region) in an atmospheric pressure CVD (APCVD) reactor is illustrated in Figure a. [ 127 ] The boundary layer resulting from steady‐state gas flow is typically assumed to be stagnant. [ 127 ] The residence time ( t r ) is the average time of the active carbon species CH x staying in the reactor.…”

Section: Present Status Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

“…[ 127 ] The boundary layer resulting from steady‐state gas flow is typically assumed to be stagnant. [ 127 ] The residence time ( t r ) is the average time of the active carbon species CH x staying in the reactor. [ 127 ] The diffusion time ( t ) is the travel time required for CH x to pass through the boundary layer and arrive at the substrate to form the graphene film, which increases with the square of the boundary layer thickness (δ).…”

Section: Present Status Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

“…[ 127 ] The residence time ( t r ) is the average time of the active carbon species CH x staying in the reactor. [ 127 ] The diffusion time ( t ) is the travel time required for CH x to pass through the boundary layer and arrive at the substrate to form the graphene film, which increases with the square of the boundary layer thickness (δ). [ 127 ] When it comes to the uniform growth of graphene, film deposition rate is determined by surface temperature and concentration of reactant.…”

Section: Present Status Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

“…[ 127 ] The diffusion time ( t ) is the travel time required for CH x to pass through the boundary layer and arrive at the substrate to form the graphene film, which increases with the square of the boundary layer thickness (δ). [ 127 ] When it comes to the uniform growth of graphene, film deposition rate is determined by surface temperature and concentration of reactant. The growth rate R of thin film is described by

\begin{matrix} R = k (T) \cdot C \end{matrix}

where k is the rate constant of the surface reaction, T is the surface temperature, and C is the concentration of reactant near the surface.…”

Section: Present Status Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

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Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Jiang

Wang

Sun

et al. 2021

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However, the high cost of SiC wafers brings an insurmountable barrier toward the batch production. Mature transfer techniques are also under development for the application in microelectronics. Additionally, the number of layers seems not well controlled, resulting in an unsatisfied nonuniformity over the entire 2-in. wafer. [35] Raman mapping for the 2D peak indicates the variation of layer thickness and strain (Figure 2b). [35] Upon correcting the peak shift caused by the strain, the map in Figure 2c ultimately shows that the graphene epitaxially grown on SiC is dominantly 1-2 layers. [35] Meanwhile, reduced graphene oxide (rGO) could also fulfill wafer-scale films affording high uniformity. [33,[36][37][38] Recently, Juvaid et al. reported the synthesis rGO films on target substrates by pulsed laser deposition (PLD), as depicted in Figure 2d. [33] A 4-in. wafer can be attained (Figure 2e), which is featured by smooth surface, high transparency, and excellent uniformity (evaluated by Raman spectroscopy in Figure 2f). [33] Despite these advances, the process of chemical oxidation introduces a large number of defects in the crystalline structure of rGO, resulting in marked decline in the electrical and thermal properties. [12] CVD is found to be the most widely used technique in semiconductor industry to synthesize thin films, which, in particular, is able to produce large-area graphene films on metallic or insulating substrates in controllable fashions. [39][40][41][42][43] In a typical CVD process for graphene synthesis, carbon gaseous precursor flows through the hightemperature reaction zone and generates active reaction species for subsequent nucleation and growth of graphene Figure 1. Various types of devices based on wafer-scale graphene films. The central panel: photos of wafer-scale graphene devices.Reproduced with permission. [16] Copyright 2010, Science. Reproduced with permission. [15] Copyright 2020, Springer Nature. Reproduced with permission. [17] Copyright 2019, Wiley-VCH. Reproduced with permission. [18] Copyright 2019, Wiley-VCH. a) Schematic illustration of the transfer process of CVD graphene onto a single CMOS die containing a read-out circuit of the image sensor. Reproduced with permission. [19] Copyright 2017, Springer Nature. b) 3D schematic illustration of a graphene-based waveguide-integrated electro-absorption modulator. Reproduced with permission. [20] Copyright 2011, Springer Nature. c) Schematic of a dual-gate bilayer graphene transistor device. Reproduced with permission. [21] Copyright 2010, American Chemical Society. d) Tilted view scanning electron microscopy image of a graphene receiver integrated circuit, showing the integration architecture of key components including graphene field effect transistor (GFET). Reproduced with permission. [22] Copyright 2014, Springer Nature. e) Schematic of device architectures proposed in resistive random access memory technology based on graphene and related materials. Reproduced with permission. [23] Copyright 2017, Wiley-VCH. f ) Schematic re...

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Section: Description Of Gas-phase Dynamicsmentioning

confidence: 99%

Section: Present Status Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

Section: Present Status Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

Section: Present Status Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

\begin{matrix} R = k (T) \cdot C \end{matrix}

where k is the rate constant of the surface reaction, T is the surface temperature, and C is the concentration of reactant near the surface.…”

Section: Present Status Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

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Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Jiang

Wang

Sun

et al. 2021

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Self‐Aided Batch Growth of 12‐Inch Transfer‐Free Graphene Under Free Molecular Flow

Liu

Sun

Cui

et al. 2022

Adv Funct Materials

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Direct synthesis of large‐area graphene on functional substrates via chemical vapor deposition has become a frontier research stream targeting practical applications. However, the batch production of transfer‐free graphene film with favorable quality and homogeneity remains a grand challenge. Herein, the direct growth of 12‐inch‐sized graphene is demonstrated over fused quartz in a batch manner. The key design of the synthetic route is the construction of a nano‐scale compartment to allow the formation of free molecular flow during growth, as well as to trap the hydroxyl species in situ released from the quartz substrates. Density functional theory calculations reveal that the hydroxyl species help decrease the energy barrier for feedstock decomposition and facilitate the carbon attachment to boost graphene growth. Thus‐prepared graphene possesses excellent optical transmittance (96% ± 1%) and electrical properties (1.22 ± 0.08 kΩ sq‒1). These findings unlock new opportunities for achieving batch production of graphene‐skinned functional materials with practical scalability and quality toward emerging uses.

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Computational Fluid Dynamics Insights into Chemical Vapor Deposition of Homogeneous MoS₂ Film with Solid Precursors

Johari,

Sirat,

Mohamed

et al. 2023

Cryst. Res. Technol.

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In this work, a comprehensive computational fluid dynamics (CFD) investigation to develop an in‐depth understanding on the fluid flow to obtain a homogenous deposition of MoS2 thin film is reported. First, the effect of substrate orientations (0, 20, 45, 70, and 90°) was simulated using ANSYS Fluent. The horizontal substrate (0°) showed a non‐uniform surface deposition rate (SDR) with relative standard deviation (RSD) of 44.1 %. The non‐uniformity gradually reduces with the increase of substrate angles and reaches the lowest for 90° with RSD of 13.1 %. The transient state analysis showed that no growth occurred for the first 8 s, followed by an SDR overshoot and finally reached a steady state >200 s. Next, the effect of horizontal separation distance (d = 1 to 6 cm) between MoO3 and the substrate is investigated. It is find that the Mo/S ratio reduces with the increase of separation distance. For d between 5 and 6 cm, the Mo/S drops by >1000 times and causes the growth environment to switch from Mo to S‐rich. This work offers a fast and cost‐effective approach to understand the fluid flow and to obtain a homogeneous deposition of MoS2 and other 2D TMD thin films.

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The role of gas-phase dynamics in interfacial phenomena during few-layer graphene growth through atmospheric pressure chemical vapour deposition

Abstract: An in-depth systematic study on the importance of fluid dynamics at the gas–solid interface to graphene growth in APCVD.

Cited by 16 publications

References 40 publications

Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Self‐Aided Batch Growth of 12‐Inch Transfer‐Free Graphene Under Free Molecular Flow

Computational Fluid Dynamics Insights into Chemical Vapor Deposition of Homogeneous MoS₂ Film with Solid Precursors

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The role of gas-phase dynamics in interfacial phenomena during few-layer graphene growth through atmospheric pressure chemical vapour deposition

Abstract: An in-depth systematic study on the importance of fluid dynamics at the gas–solid interface to graphene growth in APCVD.

Cited by 16 publications

References 40 publications

Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Self‐Aided Batch Growth of 12‐Inch Transfer‐Free Graphene Under Free Molecular Flow

Computational Fluid Dynamics Insights into Chemical Vapor Deposition of Homogeneous MoS2 Film with Solid Precursors

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Product

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Computational Fluid Dynamics Insights into Chemical Vapor Deposition of Homogeneous MoS₂ Film with Solid Precursors