The role of Al and Co co-doping on the band gap tuning of TiO2 thin films for applications in photovoltaic and optoelectronic devices

Islam, Mohammad Nurul; Podder, Jiban

doi:10.1016/j.mssp.2020.105419

Cited by 34 publications

(13 citation statements)

References 37 publications

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“…This means that the greater the amount of cobalt in the (Ti,Co)Ox film, the lower the width of its optical band gap. Such effect was also noticed in other works [14,21]. In most cases, similar to the results described in this paper, an increase in the amount of cobalt causes a decrease in the Eg opt value.…”

Section: Optical Properties Of Oxide (Tico)ox Coatingssupporting

confidence: 91%

“…Materials based on titanium and cobalt constitute a “new group” of materials whose properties have not been fully understood and used so far. Doping titanium dioxide with cobalt allows to modify a number of its properties, primarily: structural [ 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ], optical [ 14 , 15 , 16 , 17 , 18 , 20 , 21 ], electrical [ 15 , 16 , 20 , 21 ] and magnetic [ 20 ]. These coatings have been of great interest due to the formation of dilute magnetic semiconductors (DMS), which is promising for the manufacturing of spintronic and magneto-optic devices [ 22 , 23 , 24 ].…”

Section: Introductionmentioning

confidence: 99%

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Properties of Metallic and Oxide Thin Films Based on Ti and Co Prepared by Magnetron Sputtering from Sintered Targets with Different Co-Content

et al. 2021

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In this work, selected properties of metallic and oxide thin films based on titanium and cobalt were described. Thin-film coatings were prepared using the magnetron sputtering method. The deposition was carried out from sintered targets with different Co-content (2 at.%, 12 at.% and 50 at.%). The relation between the Ti–Co target composition and the Co-content in the metallic and oxide films was examined. There was 15–20% more cobalt in the films than in the target. Moreover, the deposition rate under neutral conditions (in Ar plasma) was even 10-times higher compared to oxidizing Ar:O2 (70:30) plasma. A comprehensive analysis of the structural properties (performed with GIXRD and SEM) revealed the amorphous nature of (Ti,Co)Ox coatings, regardless of the cobalt content in the coating. The fine-grained, homogenous microstructure was observed, where cracks and voids were identified only for films with high Co-content. Optical studies have shown that these films were well transparent (60% ÷ 80%), and the amount of cobalt in the target from which they were sputtered had a significant impact on the decrease in the transparency level, the slight shift of the absorption edge position (from 279 nm to 289 nm) as well as the decrease in their optical band gap energy (from 3.13 eV to 1.71 eV). Electrical studies have shown that in (Ti,Co)Ox thin films, a unipolar memristive-like effect can be observed. The occurrence of such effects has not been reported so far in the case of TiO2 coatings with the addition of Co.

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Section: Optical Properties Of Oxide (Tico)ox Coatingssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Properties of Metallic and Oxide Thin Films Based on Ti and Co Prepared by Magnetron Sputtering from Sintered Targets with Different Co-Content

et al. 2021

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“…The lattice parameters and coordinates are varying in time under the Broyden–Fletcher–Goldfarb–Shanno (BFGS) algorithm method. 32 The unit cell parameters and atomic relaxations were accomplished by the residual forces under 0.03 eV Å −1 . With the CASTEP code, the mechanical properties are calculated by using the finite-strain theory.…”

Section: Theoretical Methodologymentioning

confidence: 99%

The effect of metal substitution in CsSnI₃ perovskites with enhanced optoelectronic and photovoltaic properties

2021

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“…Experiments as well as theoretical studies reported that most photocatalyst bulk materials have a wide bandgap, see TiO [ 37 ], SrTiO [ 38 ], CuO [ 39 ], CdS [ 40 ], and ZnO [ 41 ]. Because of this specificity, the absorption of light is low in the visible (Vis) region.…”

Section: Introductionmentioning

confidence: 99%

“…They showed that the bandgap value of layered MgIn 2 Se 4 from 1.4 to 1.65 eV by increasing the temperatures from 80 to 300 K. The photoactivity of this material as regards light is very active under such conditions. Experiments as well as theoretical studies reported that most photocatalyst bulk materials have a wide bandgap, see TiO 2 [37], SrTiO 3 [38], CuO [39], CdS [40], and ZnO [41]. Because of this specificity, the absorption of light is low in the visible (Vis) region.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of optoelectronic properties of layered MgIn$$_{2}$$Se$$_{4}$$ compound under uniaxial strain, an ab initio study

Rerbal

Ouahrani

2021

Eur. Phys. J. B

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We argue that tuning the structure of a semiconductor offers abundant scope for use in a number of applications. In this work, by means of comprehensive density functional theory computations, we demonstrated that layered MgIn Se could be a promising candidate for future electronic and optoelectronic technologies. To do this task, we have applied a uniaxial strain in the z -direction. The results show that MgIn Se can support only a of deformation without losing its dynamical stability. However, we showed that the effect of strain strongly affects the bonding pattern, which tends to increase the bandgap value. Both the charge density and noncovalent interactions were analyzed to understand this behavior. In addition, we saw that the application of non-hydrostatic pressure also enhanced the photocatalytic/optoelectronic performance of the investigated material, offering useful insights into layered MgIn Se for future development in this area.

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The role of Al and Co co-doping on the band gap tuning of TiO2 thin films for applications in photovoltaic and optoelectronic devices

Cited by 34 publications

References 37 publications

Properties of Metallic and Oxide Thin Films Based on Ti and Co Prepared by Magnetron Sputtering from Sintered Targets with Different Co-Content

Properties of Metallic and Oxide Thin Films Based on Ti and Co Prepared by Magnetron Sputtering from Sintered Targets with Different Co-Content

The effect of metal substitution in CsSnI₃ perovskites with enhanced optoelectronic and photovoltaic properties

Enhancement of optoelectronic properties of layered MgIn$$_{2}$$Se$$_{4}$$ compound under uniaxial strain, an ab initio study

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The role of Al and Co co-doping on the band gap tuning of TiO2 thin films for applications in photovoltaic and optoelectronic devices

Cited by 34 publications

References 37 publications

Properties of Metallic and Oxide Thin Films Based on Ti and Co Prepared by Magnetron Sputtering from Sintered Targets with Different Co-Content

Properties of Metallic and Oxide Thin Films Based on Ti and Co Prepared by Magnetron Sputtering from Sintered Targets with Different Co-Content

The effect of metal substitution in CsSnI3 perovskites with enhanced optoelectronic and photovoltaic properties

Enhancement of optoelectronic properties of layered MgIn$$_{2}$$Se$$_{4}$$ compound under uniaxial strain, an ab initio study

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The effect of metal substitution in CsSnI₃ perovskites with enhanced optoelectronic and photovoltaic properties