Abstract:Plasma display panel (PDP) with MgO-SrO double cathode layer and SiO 2 diffusion barrier is proposed to make the SrO layer free of contaminations. Time of flight-secondary ion mass spectrometry (TOF-SIMS) analysis shows the diffusion of impurities, like Na and K, can be effectively blocked while a new SrO layer is formed on top of the MgO layer. This structure shows that high Xe gases can be used to improve the luminous efficacy 2.3 times and decrease the voltage margin more than 10 V compared to the conventio… Show more
“…[43] Studies on thin films have also shown that SrO layer forms on top of MgO due to Sr out diffusion. [44] It is therefore likely that Sr out diffuses faster than the other species and exhibits enhanced oxidizing on the top surface.…”
Section: Sr Diffusivity May Be Higher Than That Of Mg and O Transportmentioning
The high temperature oxidation behavior of Mg-Sr hypoeutectic alloys was investigated. The oxide layer was characterized after isothermal heating experiments that were conducted at 500°C in dry airflow for 12 h. It was seen that a non-uniform oxide scale formed on hypoeutectic Mg-Sr alloys with a two-phase structure whereby the oxide over the interdendritic intermetallic phase had a finer grain size than the oxide over the a-Mg dendrites. The interrupted tests on selected alloys showed that the two phases exhibit different oxidation sequences of Sr and Mg. It was observed that the intermetallic phase oxidizes first with the formation of both MgO and SrO on the surface. The oxidation proceeds with SrO and MgO formation on the a-Mg. This sequence is different from what is predicted as possible via thermodynamic calculations based on the activities of the elements on the two-phases. SEM/EDS analyses revealed that the Sr surface-enrichment has occurred, which explains the differences between the observation and the assessment. Thermodynamic re-assessment suggested that the Sr enrichment on the surface due to the surface activity of Sr in Mg could largely determine the initial oxidation sequence.
“…[43] Studies on thin films have also shown that SrO layer forms on top of MgO due to Sr out diffusion. [44] It is therefore likely that Sr out diffuses faster than the other species and exhibits enhanced oxidizing on the top surface.…”
Section: Sr Diffusivity May Be Higher Than That Of Mg and O Transportmentioning
The high temperature oxidation behavior of Mg-Sr hypoeutectic alloys was investigated. The oxide layer was characterized after isothermal heating experiments that were conducted at 500°C in dry airflow for 12 h. It was seen that a non-uniform oxide scale formed on hypoeutectic Mg-Sr alloys with a two-phase structure whereby the oxide over the interdendritic intermetallic phase had a finer grain size than the oxide over the a-Mg dendrites. The interrupted tests on selected alloys showed that the two phases exhibit different oxidation sequences of Sr and Mg. It was observed that the intermetallic phase oxidizes first with the formation of both MgO and SrO on the surface. The oxidation proceeds with SrO and MgO formation on the a-Mg. This sequence is different from what is predicted as possible via thermodynamic calculations based on the activities of the elements on the two-phases. SEM/EDS analyses revealed that the Sr surface-enrichment has occurred, which explains the differences between the observation and the assessment. Thermodynamic re-assessment suggested that the Sr enrichment on the surface due to the surface activity of Sr in Mg could largely determine the initial oxidation sequence.
In this paper, the address discharge characteristics of high-Xe PDPs with high-gamma cathode materials were investigated. It will be shown that the address discharge characteristics such as the dynamic voltage margin and the address discharge time lag of high-Xe PDP with MgO-SrO double cathode layer and one with MgCaO single cathode layer can be improved by inducing stable, continuous weak discharges during the reset period with a newly designed waveform. The deposition of pure MgO powder on high gamma cathode material has also proved to be effective in reducing the address discharge time lag of high-Xe PDP. (a) Dynamic voltage margin (b) Address discharge time lag Figure 6. Address discharge characteristics of test panels with high-gamma cathode materials to which the proposed driving waveform is applied 7.2 / K.-W. Whang SID 2012 DIGEST • 63
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