The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications

“…The minority carrier lifetime in p-type vacancy doped LPE grown absorber for eSWIR band has not been widely reported in the literature; however, recent experimental results on MBE grown material suggest a value in the range of ~ 20 ns. 40 On the other hand, the reported SRH lifetime in In-doped, MBE grown n-type absorber layers is in the order of ~ 1 μs. [40][41][42][43] The direct experimental comparison of n-on-p and p-on-n photodetectors operating in the eSWIR band with cut-off wavelength of 2 μm has been undertaken by CEA-LETI in France on a vacancy doped p-type absorber (grown by LPE) and on In-doped n-type absorber (grown by MBE).…”

“…40 On the other hand, the reported SRH lifetime in In-doped, MBE grown n-type absorber layers is in the order of ~ 1 μs. [40][41][42][43] The direct experimental comparison of n-on-p and p-on-n photodetectors operating in the eSWIR band with cut-off wavelength of 2 μm has been undertaken by CEA-LETI in France on a vacancy doped p-type absorber (grown by LPE) and on In-doped n-type absorber (grown by MBE). The results show a similar quantum efficiency for both technologies.…”

HgCdTe p+‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

“…The theoretical dependencies of current-voltage characteristics were calculated within one-dimensional diffusion-drift mode including Poisson's equation for distribution potential along the coordinate taking into account graded wide-gap layer and continuity equations for electrons and holes time dependence carrier concentration in allowed energy bands [8]. It is assumed that carrier trapping and emission is performed through single-charged deep level by Sah-Noyce-Shockley mechanism.…”

Гетероструктуры CdHgTe для нового поколения ИК фотоприемников, работающих при повышенных температурах

“…4 показаны экспериментальные и расчетные зависимости обратного тока от температуры в координатах Аррениуса для двух значений напряжения на ФД (геометрические фигуры). Расчеты температурных зависимостей токов были выполнены на основе одномерной диффузионно-дрейфовой модели [7] с учетом ограничения токов диффузией подвижных носителей (кривая 1) и с учетом генерации носителей тока по механизму Са−Шокли−Рида−Холла (кривая 2). В области температур T = 120−210 K обратные токи ФД ограничивались диффузией неосновных носителей тока, а в области температур T = 95−120 K наблюдался избыточный ток.…”