The resonant gate transistor

Nathanson, H.C.; Newell, W.E.; Wickstrom, R.A.; Davis, James O.

doi:10.1109/t-ed.1967.15912

Cited by 950 publications

(482 citation statements)

References 10 publications

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“…The dc-bias dependence of arises from a -dependent electrical stiffness generated by the nonlinear dependence of electrode-to-resonator gap capacitance on displacement [12], [32]. This electrical stiffness effectively subtracts from the resonator mechanical stiffness at each location above the electrode, lowering the overall spring stiffness at that location to , and contributing to the overall frequency shift (which is obtained by integrating over the electrode width).…”

Section: ) Hf Filter Structure and Operationmentioning

confidence: 99%

“…Using (18) and (24), and recognizing that (30) for parallel-plate capacitively driven devices, for the HF micromechanical filter of Fig. 26 takes on the form (31) Using (31) with (19) and (29), the relevant dependencies under a given frequency scaling can be comparatively written out as (32) (33) (34) (35) Using these equations, if scales by , also scales by , , and scale by , and must scale by to maintain a constant . Equation (34) then predicts that scales by .…”

Section: B Dynamic Rangementioning

confidence: 99%

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Frequency-selective MEMS for miniaturized low-power communication devices

Nguyen

1999

IEEE Trans. Microwave Theory Techn.

232

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Section: ) Hf Filter Structure and Operationmentioning

confidence: 99%

Section: B Dynamic Rangementioning

confidence: 99%

Frequency-selective MEMS for miniaturized low-power communication devices

Nguyen

1999

IEEE Trans. Microwave Theory Techn.

232

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“…This interest is so felt in Science that in a recent survey, the MEMS technologies have been included among the twelve most promising technologies of the twenty-first century, destined to revolutionize the world of industry and consumer products and indicate as those technologies that will support more easily a new model of interface between man and electronic device. Born in 1964 with the production of the first batch device [1], the MEMS technology, starting as a purely engineering science, has increasingly turned into a physical-mathematical multi-discipline, thanks to advanced theoretical modeling request both in static and dynamic conditions, requiring soft skills highly specialized. However, the formulation of many theoretical models does not allow either to obtain explicit solutions, or the opportunity to prove their existence and uniqueness, nor any of their regularity property; for this reasons, under certain conditions, we derive implicit solutions to be studied only numerically.…”

Section: Introduction To the Problemmentioning

confidence: 99%

Electrostatic field in terms of geometric curvature in membrane MEMS devices

Barba

Fattorusso

Versaci

2017

Communications in Applied and Industrial Mathematics

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In this paper we present, in a framework of 1D-membrane Micro-Electro-MechanicalSystems (MEMS) theory, a formalization of the problem of existence and uniqueness of a solution related to the membrane deformation u for electrostatic actuation in the steadystate case. In particular, we propose a new model in which the electric field magnitude E is proportional to the curvature of the membrane and, for it, we obtain results of existence by Schauder-Tychonoff's fixed point application and subsequently we establish conditions of uniqueness. Finally, some numerical tests have been carried out to further support the analytical results.

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“…Simple lumped element models of MEMS actuators with a single degree of freedom [14][15][16][17] result in easy calculations but fail to capture details of the behavior beyond pull-in. At the other end of modeling complexities, simulations of MEMS actuators beyond pull-in have been done using 3D models [18].…”

Section: Introductionmentioning

confidence: 99%

Cantilever beam electrostatic MEMS actuators beyond pull-in

Gorthi

Mohanty

Chatterjee

2006

J. Micromech. Microeng.

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The operational range of electrostatic MEMS parallel plate actuators can be extended beyond pull-in in the presence of an intermediate dielectric layer, which has a significant effect on the behavior of such actuators. Here, we study the behavior of cantilever beam electrostatic actuators beyond pull-in using a beam model along with a dielectric layer. The results from the simple beam model are validated with 3D simulations performed in CoventorWare TM . Three possible static configurations of the beam are identified over the operational voltage range. We call them floating, pinned and flat; the latter two are also called arc-type and S-type in the literature. We compute the voltage ranges over which the three configurations can exist and the points where transitions occur between these configurations. Voltage ranges are identified where bi-stable and tri-stable states exist. A classification of all possible transitions (pull-in and pull-out as well as transitions we term pull-down and pull-up) is presented based on the dielectric layer parameters. Dynamic stability analyses are presented for the floating and pinned configurations. For high dielectric layer thickness, discontinuous transitions between configurations disappear and the actuator has smooth predictable behavior, but at the expense of lower overall tunability.

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The resonant gate transistor

Cited by 950 publications

References 10 publications

Frequency-selective MEMS for miniaturized low-power communication devices

Frequency-selective MEMS for miniaturized low-power communication devices

Electrostatic field in terms of geometric curvature in membrane MEMS devices

Cantilever beam electrostatic MEMS actuators beyond pull-in

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