The resolution and repeatability of stress measurement by Raman and EBSD in silicon

Li, Xu; Jin, Senlin; Zhang, Ran; Gao, Ying; Liu, Zheng; Yao, Yaxuan; Wang, Yalei; Wang, Xueshen; Zhang, Yi; Tao, Xingfu

doi:10.1016/j.vacuum.2022.111276

Cited by 6 publications

(3 citation statements)

References 22 publications

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“…Si wafer (100) was measured before and after the deposition of the thin film by Raman spectrometry (inVIA Reflex, Renishaw). The residual stress of the thin film and nanolaminates was calculated using the following equation: 43 σ 100 = −434( ω t − ω 0 )where ω t and ω 0 are the characteristic Si peak before and after the deposition of the thin films.…”

Section: Methodsmentioning

confidence: 99%

Atomic-scale stress modulation of nanolaminate for micro-LED encapsulation

Wen,

Hu,

Yuan

et al. 2024

Nanoscale

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Section: Methodsmentioning

confidence: 99%

Atomic-scale stress modulation of nanolaminate for micro-LED encapsulation

Wen,

Hu,

Yuan

et al. 2024

Nanoscale

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“…Because the thickness of the APS Si layer is usually less than 100 µm, the quantification of stress in the cross-sections of the Si layers is another matter worthy of research. Laser Raman spectroscopy [20][21][22][23][24][25] is the method most commonly used for residual stress measurements of thin coatings. The stress can be calculated via Raman spectroscopy based on Equation (5) [23]:…”

Section: Introductionmentioning

confidence: 99%

“…Laser Raman spectroscopy [20][21][22][23][24][25] is the method most commonly used for residual stress measurements of thin coatings. The stress can be calculated via Raman spectroscopy based on Equation (5) [23]:…”

Section: Introductionmentioning

confidence: 99%

Characterization and Control of Residual Stress in Plasma-Sprayed Silicon Coatings on SiC/SiC Composites

et al. 2023

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In order to reveal the relationship between residual stress in Si layers of SiC/SiC composites and the different parameters used in their preparation, the residual stress of the coating surface was tested using X-ray sin2ψ technology and laser Raman spectroscopy. Then, the Raman shift–stress coefficient (P) and the Raman shift with free stress (ω0) were calculated as −201.41 MPa/cm−1 and 520.591 cm−1 via linear fitting with the least squares method. The results showed that all the as-sprayed Si coatings exhibited tensile stress on the surface, ranging from 53.5 to 65.9 MPa. The parameters of the spraying distance and second gas (H2) flow rate were considered to be the most important for controlling the residual stress on the coating surface. Additionally, the surface tensile stress of the Si layers could be eliminated and even changed into compressive stress by annealing above 800 °C. Furthermore, the residual stress distribution in the cross-section of the Si layers was evaluated using laser Raman spectroscopy. Additionally, the particle characteristics, such as in-flight velocity and temperature, were investigated using a diagnostic system. The results of this research contribute to increasing the understanding and control of residual stress in APS Si bond layers.

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