We report on the numerical investigation of the resistive sensor for the 78-118 GHz range. A three-dimensional finite-difference time-domain method was applied to simulate the wave propagation within a waveguide segment with the semiconductor sensor attached to a wider wall of the wave--guide. The electric field distribution, voltage standing-wave ratio and the average electric field dependences on frequency have been determined for several sets of dimensions and specific resistances of the sample. It is demonstrated that a proper selection of the dimensions and specific resistance of the sample can compensate the waveguide dispersion and the decrease of the electron heating effect with frequency. Therefore, a nearly constant sensitivity of the sensor can be obtained for the entire frequency range.