Experimental Investigation of Resistive Sensor for High Power Millimetre Wave Pulse Measurement

Abstract

An experimental investigation of a high power millimetre wave pulse sensor is presented. Two groups of sensors with a flat frequency response were fabricated according to results of the optimisation. The frequency response and voltage standing wave ratio were measured and compared with results of the electrodynamical simulations. The largest measured sensitivity variation of the best sensors within waveguide frequency range was ±8%. The reasonable agreement between measured and simulated values of the sensitivity was obtained.

Real time measurement system for high power microwave hot carrier detector

“…The power range of the microwave pulse is 0.1-1.4 kW, a little larger than the warm electron region of the semiconductor. There is a highly linear regression correlation between the output voltage U s and the input power P in of the hot carrier detector in this region [13]. On the one hand, the experimental results verify this linear relationship, which proves that the measurement results of the hot carrier detectors are reliable.…”

“…This power range belongs to the thermal electronic area of the semiconductor. The output voltage U s and the input power P in are satisfied with the quadratic dependence in this area [13,27]. The calibrated data in Fig.…”

“…At present, Lithuania experts have developed cross-waveguide, diaphragm and in-situ three kinds of different structures of narrow band detector. They were respectively applied to the power measurement from L to Ku band [10][11][12][13][14]. The dual ridge waveguide structure of the broadband detector was also developed and tested, which operated for 2.6-7.8 GHz [15,16].…”