The resistive gate CTD area-image sensor

1980, a revolution in silicon detectors, from energy spectrometer to radiation imager: Some technical and historical details

“…Based on this principle, the silicon drift detector has been introduced by Emilio Gatti and Pavel Rehak [33]. This concept of continuous (not clocked) signal charge transport over a longer distance via a field valley deep in the bulk is similar to the Resistive Gate Device [34] which also used charge transport via a field gradient close to the surface for visible light imaging. The clocked Charge Coupled Device structure has become preferred for visible imaging, but for energetic radiation the drift detector is more used than high resistivity, deep depletion CCD.…”