The Reliability Evaluation of Thin Silicon Dioxide Using the Stepped Current TDDB Technique

Abstract

A wafer level dielectric breakdown reliability measurement technique using logarithmically stepped‐up stress current density is proposed, and the effectiveness of this technique is demonstrated. The stepped current time‐dependent dielectric breakdown (SCTDDB) measurement starts at a very low stress current density false(10−5A/cm2false) , and it steps up logarithmically to a maximum stress current density false(1.0A/cm2false) until oxide breakdown occurs. The SCTDDB measurement has high detection sensitivity for defect‐related breakdown, a wide dynamic range false(10−5 normalto 102C/cm2false) , adequate measurement time (within 60 normals/normalchip ), and data compatibility with conventional constant current TDDB result. The SCTDDB technique is a very simple and powerful evaluation tool for thin silicon dioxide reliability analysis.

Evaluation of charge build-up in wafer processing by using MOS capacitors with charge collecting electrodes

“…Figure 1 shows the typical capacitor area dependence of charge to breakdown (QBD) of MOS capacitors. The QsD measurement was made by using stepped current TDDB (Time Dependent Dielectric Breakdown) technique [6]. For the large capacitor area above 4mm2, the intrinsic QBD decreased less than 1/5 of that for the small area capacitor.…”