The relationship between lattice matching and crosshatch in liquid phase epitaxy HgCdTe on CdZnTe substrates

Mechanical and Thermal Properties

“…In a subsequent review, Capper [23] reports a(x ) = 6.4614 + 0.0084x + 0.0168x 2 − 0.0057x 3 Å (8.16) as the expression for the variation of lattice parameter, a, with the composition, x , which was proposed by Higgins et al [3]; and points out that the differences with Brice's near-stoichiometric case and that of Woolley and Ray [24] amount to ±0.001Å or less. Additional data for bulk material [5,[25][26][27], as well as for molecular beam epitaxy (MBE) [28,29,33], liquid phase epitaxy (LPE) [30][31][32]35], and metal-organic vapor phase epitaxy (MOVPE) [36] material are also shown in Figure 8.3, which are in general agreement with each other and with Equation 8.16. In contrast, earlier MOVPE growth of HgTe layers on CdTe by Bhat et al [38] resulted in lattice parameters of 6.454-6.456Å at 1.0-3.5 μm film thickness.…”

Modeling of the Structural Properties of Hg1–x Cd x Te

“…Experimentally determined values for the binary lattice parameters (all determined at room temperature) are CdTe = 6.481 ± 0.001 Å (calculated arithmetic mean and sample standard deviation from Refs. [8][9][10][11][12][13][14][15][16][17][18][19][20] and HgTe = 6.4611 ± 0.0009 Å (calculated arithmetic mean and sample standard deviation from Refs. 14-21).…”

Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe

“…8 Similar defects have been seen on (111) HgCdTe/CdZnTe grown by LPE. 9 The dark area in the left corner of the figure is a region which is tilted with respect to the rest of the wafer by approximately 24 arcsec. The critical thickness for this level of mismatch is expected to be less than one micron; even though the layer has far exceeded its critical thickness, the layer is only partially relaxed.…”