The recharge-enhanced transformations of donor-acceptor pairs and clusters in CdS

Photo‐induced changes of photoconductivity and exciton luminescence in ZnO crystals

“…One of the factors that can influence semiconductor parameters is light irradiation. Photoinduced changes of photosensitivity and luminescence were observed in CdS, CdSe, GaAs and other materials [1,2]. These changes were shown to be due to spatial redistribution of point defects or defect reactions stimulated by photocarrier capture on local centres [1,3].…”

Metastable interstitials in CdSe and CdS crystals

“…It was shown that MDs can be both complex [1,2] and point [3,4] defects. The former rearrange due to their recharge after photocarrier capture and following longrange diffusion of components [1,2], while the later form different centres because of short-range shift occurring in the region of one configuration cage [1,4]. Complex MDs were found earlier in CdS and CdSe crystals and were proved to be responsible for photo-enhanced defect reactions [1,2].…”

“…The former rearrange due to their recharge after photocarrier capture and following longrange diffusion of components [1,2], while the later form different centres because of short-range shift occurring in the region of one configuration cage [1,4]. Complex MDs were found earlier in CdS and CdSe crystals and were proved to be responsible for photo-enhanced defect reactions [1,2]. The present investigations have shown that, in these compounds, point MDs, namely, metastable interstitials can also be present and display themselves in such phenomenon, as an anomalous defect drift under electric field.…”

Role of Ionic Processes in Degradation of Wide-Gap II-VI Semiconductor Materials

“…It has been proved that a change of these defect interactions with one another and with other defects as well as their replacement in crystal under different external factors result in electric, photoelectric, and photoluminescent material characteristic changes and some specific effects [1,2].…”