Role of Ionic Processes in Degradation of Wide-Gap II-VI Semiconductor Materials

Abstract

A role of mobile defects in processes responsible for II-VI compound semiconductor characteristic instability is under consideration. These defects have been shown to be responsible for electron-enhanced reactions in these materials, in particular, shallow donor creation in CdS crystals. Accumulation of mobile defects near dislocations results in some specific effects: anisotropy of conductivity induced by electric field and distortion of edge emission spectrum shape. These effects side by side with electron-enhanced defect reactions have been found to influence considerably semiconductor device characteristics.

The Effect of Γ-Irradiation on Photoluminescent Properties of Cdznse /Znse Quantum Pits

“…One of the problems that restrave the creation and commercial use of lasers for a visible range based on the ZnSe / CdSe heterostructure and its solid solutions (with quantum yams, QW, as active elements [1]) is associated with degradation processes caused as laser generation, electronic or optical pumping [2]. When the laser degradation is raised, the formation,…”