Abstract:Nitrogen (N) and fluorine (F) ions were sequentially implanted into the buried oxide (BOX) to improve the total dose radiation hardness of the BOX layer in silicon-oninsulator (SOI) materials. The radiation response of the BOX layers modified by the ion implantation was characterized by flat-band voltage shifts and trapped charge changes in the BOX, based on the capacitance-voltage (C-V) measurements on the polysilicon-BOX-semiconductor (PBS) structures fabricated on the SOI materials, before and after irradia… Show more
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