The radial layout design concept for the Bi-mode insulated gate transistor

Storasta, Liutauras; Rahimo, Munaf; Bellini, Marco; Kopta, A.; Vemulapati, Umamaheswara; Kaminski, Nando

doi:10.1109/ispsd.2011.5890789

Cited by 33 publications

(18 citation statements)

References 2 publications

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“…The pilot-IGBT is sized to reduce the snapback in the forward conduction mode at low temperatures [16]. The device has, however, suffered from secondary snapbacks due to plasma formation primarily limited to the IGBT region with only a small section of the RC-IGBT area being conductivity modulated [37]. In order to utilise the full device area through the lateral expansion of the plasma area towards the RC-IGBT area, a radial layout of the anode shorts is used.…”

Section: A Bigt (Bi-mode Integrated Gate Transistor)mentioning

confidence: 99%

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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The Reverse Conducting IGBT has several benefits over a separate IGBT and diode solution and has the potential to become the dominant device within many power electronic applications; including, but not limited to, motor control, resonant converters, and switch mode power supplies. However, the device inherently suffers from many undesirable design trade-offs which have prevented its widespread use. One of the most critical issues is the snapback seen in the forward conduction characteristic which can prevent full turn-on of the device and result in the device becoming unsuitable for parallel operation (required in many high voltage modules). This phenomenon can be suppressed but at the expense of the reverse conduction performance. This paper provides an overview of the technical design challenges presented by the RC-IGBT structure and reviews alternative device concepts which have been proposed in literature. Analysis shows that these alternate concepts either present a trade-off in performance characteristics, an inability to be manufactured, or a requirement for a custom gate drive.

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Section: A Bigt (Bi-mode Integrated Gate Transistor)mentioning

confidence: 99%

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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“…In forward conduction state (V GE = 15V, V CE > 0), RC-IGBT initially works in unipolar mode, and conductivity modulation occurs when the electron current flowing above the P + collector segments is large enough to trigger the holes injection in the active region [10]- [12]. In the edge termination, there is almost no electron current except for a few electrons flow from the active region by lateral diffusion.…”

Section: Device Structure and Mechanismmentioning

confidence: 99%

Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design

Zhang

Yangjun

et al. 2014

IEEE Electron Device Lett.

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In this letter, a novel design concept for the edge termination of reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed and evaluated. The new design can be easily realized by backside layout design without additional processes and manufacturing cost. Simulation results show that the proposed method can reduce the total amount of injected holes by 94.6% and 81.5% in the insulated gate bipolar transistor (IGBT) and diode modes, respectively. Thus, the current crowding problem in the edge termination when RC-IGBT device turns OFF in IGBT mode or recovers in diode mode is suppressed.Index Terms-Current crowding, reliability, reverseconducting insulated gate bipolar transistor (RC-IGBT), edge termination.

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“…This ensures that hole injection occurs at low currents from the P+ pilot-anode in the IGBT section of the BIGT. To further improve the on-state losses, the radial design of the anode shorts is employed [7]. As a result the device can operate in both freewheeling diode mode and (IGBT) transistor mode by utilizing essentially the same available silicon volume in both modes.…”

Section: The Bigt Conceptmentioning

confidence: 99%

BIGT control optimisation for overall loss reduction

Papadopoulos

Storasta

Gallo

et al. 2013

2013 15th European Conference on Power Electronics and Applications (EPE)

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In this paper we present the latest results of utilizing MOS-control (MOSctrl) to optimize the performance of the Bi-mode Insulated Gate Transistor (BIGT) chip. The adaption of the BIGT technology enables higher output power per footprint. However, to enable the full performance benefit of the BIGT, the optimisation of the known standard MOS gate control is necessary. This optimisation is being demonstrated over the whole current and temperature range for the BIGT diode turn-off and BIGT turn-on operation. It is shown that the optimum control can offer a performance increase up to 20% for high voltage devices.

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The radial layout design concept for the Bi-mode insulated gate transistor

Cited by 33 publications

References 2 publications

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design

BIGT control optimisation for overall loss reduction

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