The proton mechanism of neutralization of surface recombination and fast capture centres on germanium

Козлов

et al. 1981

Self Cite

Complex investigations are made of nuclear magnetic resonance of protons and fluorine on the Si02 surface, thermo-and photodesorption of water and hydrogen from the surfaces of silicon and silicon dioxide, and also changes in the electrophysical parameters of the real silicon surface in the process of hydrogen photodesorption. Fluorination is found to lead to a considerable strengthening of the bonds of the water molecules with the coordination-unsaturated silicon atoms and also to protonization of the adsorbed H,O molecules. It is shown that strongly protonized coordination-bound molecules of water are the main source of hydrogen on the fluorinated surfaces.Ways of controlling the proton-donor properties of the surface are discussed. A dissociation mechanism is proposed of the H,O molecules on the semiconductor surface when exposed t o lowenergy light quanta.

Section: Resultsmentioning

confidence: 91%

On the effect of halogens on proton processes in the SiSiO2 structures

Golovanova

Козлов

et al. 1981

Self Cite

On the mechanism of dissipation of energy released in the capture of charge carriers to adsorptive slow states of a semiconductor

Козлов

Levshin

1981

Self Cite

The influence is investigated of H2O, D2O, CH3OH, CCI4, C6,H14, NH3, and p‐benzoquinone molecules on the kinetics of charge exchange of slow states in the field effect on the germanium surface in the temperature range 250 to 320 K. The results obtained indicate that the molecules weakly sorbed on the semiconductor surface “stimulate” the capture of free charge carriers to slow traps. It is shown that this effect is due to a more rapid dissipation of energy released in the capture events through excitation of the high‐energy vibrational modes of adsorbed molecules. The causes of the abnormally small cross sections for capture of charge carriers by slow surface states are discussed.

On the nature and energy spectrum of surface recombination centres

Grinev

1981

Self Cite

The effect of adsorption‐desorption processes on recombination and capture of charge carriers on real germanium surfaces is investigated. It is shown that the quasicontinuous energy spectrum of recombination levels is independent of the spectrum of fast states. Changes in the parameters of the spectrum of recombination centres in adsorption are associated with the rearrangement of the disordered surface phase as a result of creation of new surface chemical complexes. A possible model of surface recombination centres is discussed.