Complex investigations are made of nuclear magnetic resonance of protons and fluorine on the Si02 surface, thermo-and photodesorption of water and hydrogen from the surfaces of silicon and silicon dioxide, and also changes in the electrophysical parameters of the real silicon surface in the process of hydrogen photodesorption. Fluorination is found to lead to a considerable strengthening of the bonds of the water molecules with the coordination-unsaturated silicon atoms and also to protonization of the adsorbed H,O molecules. It is shown that strongly protonized coordination-bound molecules of water are the main source of hydrogen on the fluorinated surfaces.Ways of controlling the proton-donor properties of the surface are discussed. A dissociation mechanism is proposed of the H,O molecules on the semiconductor surface when exposed t o lowenergy light quanta.
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