The properties of ZnSnAs2 and CdSnAs2

Gasson, D. B.; Holmes, P.J.; Jennings, I.C.; Marathe, B R; Parrott, J.E.

doi:10.1016/0022-3697(62)90174-9

Cited by 55 publications

(29 citation statements)

References 10 publications

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“…This way we can't prove the peritectic type of reaction in ZnSnAs 2 . The DTA measurements of ZnSnAs 2 were reported earlier in works [40,41] are rather similar results. In both cases the authors observed unexpected low temperature effect at 550-565 C and they interpret as the borders of the dissipation of the ZnSnAs 2 .…”

Section: Resultssupporting

confidence: 73%

“…The eutectic composition (Fig.4) Additionally two extra low-temperature effects were observed in every sample. Earlier these effects were observed only in two works [40,41]. The authors [40,41] proposed that these effects can be the borders of dissipation of the ZnSnAs 2 and the composition of this area can be described as ZnSnAs 2 +SnAs+Liquid.…”

Section: Resultsmentioning

confidence: 94%

“…In both cases the authors observed unexpected low temperature effect at 550-565 C and they interpret as the borders of the dissipation of the ZnSnAs 2 . According [40,41] the composition in this area can be described as ZnSnAs 2 +SnAs+Liquid. It seems quite strange, because the dissipation is not a reversible effect, but authors observed it both on the heating and cooling in DTA curves.…”

Section: Resultsmentioning

confidence: 99%

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Phase diagram of the ZnSnAs2–MnAs system

Федорченко

Aronov

Маренкин

et al. 2015

Journal of Alloys and Compounds

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Section: Resultssupporting

confidence: 73%

Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%

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Phase diagram of the ZnSnAs2–MnAs system

Федорченко

Aronov

Маренкин

et al. 2015

Journal of Alloys and Compounds

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“…The energy gap (E g ) values are compared with the other theoretical and experimental values in Table 2 21]. As expected, the theoretical energy gaps are underestimated due to the local-density-functional formulation of exchange and correlation [22][23][24].…”

Section: Band Structures At Ambient and High Pressuresmentioning

confidence: 92%

Electronic Structure and Physical Properties of ABC2 (A = Zn, B = Si, Ge, Sn, and C = P, As) Ternary Pnictide Semiconductors

Rita¹

2001

phys. stat. sol. (b)

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Band structure calculations of ABC 2 (A ¼ Zn, B ¼ Si, Ge, Sn, and C ¼ P, As) ternary pnictides performed using the semi-relativistic 'tight binding linear muffin tin orbital' (TB-LMTO) method within local density approximation under ambient and high pressures are reported here. The energy gap at ambient pressure is found to be direct in all the cases and the nature of the gap crucially depends on the manner in which the d electrons of atom A are treated. The equilibrium lattice constants, the bulk modulus, its first derivative and the metallisation volume obtained from the total energy calculations are also reported. More generalized equations connecting cell volume (V 0 ) and microhardness (H) as well as V 0 and melting point (q m ) for pnictides are established, by use of which the values of H and q m for some pnictides are predicted for the first time in cases where experimental values are not known.

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“…The structure of some AIIBIVCV compounds was thoroughly studied by Pfister (1958Pfister ( , 1963, Folberth & Pfister (1957), Goodman (1957), Strauss & Rosenberg (1961), Gasson, Holmes, Jennings, Marathe & Parrott (1962), Leroux-Hugon (1963), Goriunova, Mamaev & Protchuchan (1962), Goriunova, Sokolova & Tsian Bin-Si (1963) and Tsian Bin-Si, Titchina, Osmanov & Goriunova (1963).…”

Section: The Structure Of Crystalline Cdgepzmentioning

confidence: 99%