The profile of the domain walls in amorphous glass-covered microwires

Beck, F.; Rigue, Josué Neroti; Carara, M.

doi:10.1016/j.jmmm.2017.03.003

Cited by 18 publications

(2 citation statements)

References 27 publications

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“…The observation of rapid single-domain wall (DW) propagation in magnetic wires has garnered significant attention from the perspective of fundamental physics. This includes investigating the origins of DW nucleation and propagation fields, as well as the remarkably high DW velocities ( v ) and DW mobility ( S ) [ 1 , 20 , 25 , 26 , 27 , 28 , 29 , 30 ]. Conversely, various potential applications, such as racetrack memories, magnetic logic, and electronic surveillance, have been developed by leveraging the magnetic bistability of fast and controllable DW propagation [ 31 , 32 , 33 ].…”

Section: Introductionmentioning

confidence: 99%

Monitoring the Velocity of Domain Wall Motion in Magnetic Microwires

Chizhik,

Corte-Leon,

Zhukova

et al. 2024

Sensors

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An approach was proposed to control the displacement of domain walls in magnetic microwires, which are employed in magnetic sensors. The velocity of the domain wall can be altered by the interaction of two magnetic microwires of distinct types. Thorough investigations were conducted utilizing fluxmetric, Sixtus–Tonks, and magneto-optical techniques. The magneto-optical examinations revealed transformation in the surface structure of the domain wall and facilitated the determination of the mechanism of external influence on the movement of domain walls in magnetic microwires.

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Section: Introductionmentioning

confidence: 99%

Monitoring the Velocity of Domain Wall Motion in Magnetic Microwires

Chizhik,

Corte-Leon,

Zhukova

et al. 2024

Sensors

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“…Studies of DW dynamics in glass-coated microwires have been a subject of intensive research [21,22,23,24]. Achieving high DW velocities in these materials has relied on geometrical constraints (i.e., different values of internal stresses) and special magnetic structures formed in either positive, negative, or vanishing magnetostrictive compositions.…”

Section: Introductionmentioning

confidence: 99%

Impact of Stress Annealing on the Magnetization Process of Amorphous and Nanocrystalline Co-Based Microwires

et al. 2019

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The domain wall (DW) dynamics of amorphous and nanocrystalline Co-based glass-coated microwires are explored under the influence of stress annealing. Different annealing profiles have enabled remarkable changes in coercivity and magnetostriction values of Co-based amorphous microwires with initially negative magnitude, allowing induced magnetic bistability in stress-annealed samples and, consequently, high DW velocity has been observed. Similarly, Co-based nanocrystalline microwires with positive magnetostriction and spontaneous bistability have featured high DW velocity. Different values of tensile stresses applied during annealing have resulted in a redistribution of magnetoelastic anisotropy showing a decreasing trend in both DW velocities and coercivity of nanocrystalline samples. Observed results are discussed in terms of the stress dependence on magnetostriction and microstructural relaxation.

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Matteucci Effect and Single Domain Wall Propagation in Bistable Microwire under Applied Torsion

Jiménez

Calle

Fernández-Roldán

et al. 2021

Physica Status Solidi (a)

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On the Matteucci Effect and the Bistable Behavior in Microwires under Applied TorsionThe effects of an electrical current flowing through magnetic nanostructures are connected to several underlying novel phenomena that offer new opportunities for electronics technology or "spintronics." [1] For instance, spin-polarized current gives rise to the spin transfer-torque effect, in which the magnetization orientation in a magnetic layer of a tunnel junction or spin valve can be modified. In magnetic storage technologies, the design of writing and reading magnetic bits in high-speed devices profits of the effect induced by small current to inject domain walls (DWs), or to modify their motion characteristics (i.e., race track memories for magnetic storage or in logic devices). [2][3][4] Most of the studies have been conducted in Permalloy lithography nanostripes, where the shape determines the magnetic anisotropy characteristics. There, vortex and transverse DWs are injected or trapped in artificial notches or by local stray fields. [5,6] In cylindrical nanowires, the geometrical symmetry imposes significant differences. The motion of DWs was numerically solved using the Landau-Lifshitz-Gilbert equation, involving all different energy terms, where transverse or vortex DWs are, respectively, obtained for diameters smaller or larger than the exchange length of the corresponding material. [7] More recently, electrochemically grown cylindrical nanowires with diameter in the range 40-400 nm have been investigated experimentally and modeled by micromagnetic simulations. There, the magnetization reversal is typically activated by the propagation of a vortex DW which due to cylindrical geometry is also labeled as Bloch-point DW. [8,9] With the increase in diameter, as is the case of magnetic microwires fabricated by ultrarapid solidification techniques, new observations and opportunities are offered. They are fabricated in a continuous way with up to hundred-meter length and diameter in the range 0.1-90 μm for the so-called glass-coated microwires [10][11][12] and around 120-180 μm for the in-waterquenched ones. [13] Such ultrarapid solidification techniques introduce very strong mechanical stresses that determine most of the magnetic properties which have been reviewed in other studies. [14][15][16]

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The profile of the domain walls in amorphous glass-covered microwires

Cited by 18 publications

References 27 publications

Monitoring the Velocity of Domain Wall Motion in Magnetic Microwires

Monitoring the Velocity of Domain Wall Motion in Magnetic Microwires

Impact of Stress Annealing on the Magnetization Process of Amorphous and Nanocrystalline Co-Based Microwires

Matteucci Effect and Single Domain Wall Propagation in Bistable Microwire under Applied Torsion

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