The problem of twinning in NdGaO3 Czochralski crystals

Uecker, R.; Reiche, P.; Alex, V.; Doerschel, J.; Schalge, R.

doi:10.1016/0022-0248(94)91285-8

Cited by 20 publications

(10 citation statements)

References 11 publications

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“…In such case the twin lamellae in NdGaO 3 crystals are generated concurrently with dislocation low-angle boundaries. This fact confirms the results obtained by UECKER et al, 1994 demonstrating that in NdGaO 3 perovskite twins originate during the growth process in rapidly crystallized region. Fig.…”

Section: Neodymium Gallatesupporting

confidence: 91%

“…In NdGaO 3 perovskite twins originate during a growth process in a rapidly crystallized region which is caused by instabilities of the crystal-melt interface (UECKER et al, 1994) COCKAYNE et al, 1975;PERNER et al,1987;LI et al, 1990;LI et al, 1992;SAVYTSKII et al, 1999). At the moment the twin formation mechanism in YAlO 3 crystals remains unsolved.…”

Section: Introductionmentioning

confidence: 99%

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Etching Figures in Neodymium Gallate and Yttrium Aluminate Crystals

Savytskii

Matkovskii

Solskii³

et al. 2000

Cryst. Res. Technol.

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The dislocations existing in single crystals of neodymium gallate and yttrium aluminate grown by the Czochralski technique have been studied by means of etch pits. The data concerning their solubility in cases of different directions of a face orientation, various treatment temperatures and several enchant types are reported. The investigation of etch pits in the twinned YAlO 3 and NdGaO 3 crystals showed that twins are formed during a growth process. In the [110]-pulled NdGaO 3 crystals the discrepancy between the twin and matrix parts of a crystal is accommodated by the dislocation congestion and the dislocation low-angle boundaries whereas in [010]-pulled YAlO 3 crystals the microcracks perform this function.

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Section: Neodymium Gallatesupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Etching Figures in Neodymium Gallate and Yttrium Aluminate Crystals

Savytskii

Matkovskii

Solskii³

et al. 2000

Cryst. Res. Technol.

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“…30 However, this type of magnetic switching may not occur for two reasons. First, off-stoichiometry or partial relaxation can produce magnetically biaxial behaviour 31 below $200 K. Second, NGO can form twins (on {110} NGO and {112} NGO planes) 32 that modify the local magnetic anisotropy of epitaxial films grown on top. Here, we achieve TAMR via each of these two scenarios in two devices fabricated on separate substrates, and we use MOKE to verify magnetic switching at the 5 K measurement temperature.…”

Section: -Graphene Interfacesmentioning

confidence: 99%

Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

Phillips

Lombardo

Ghidini

et al. 2016

Applied Physics Letters

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Using ferromagnetic La0.67Sr0.33MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32–35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La0.67Sr0.33MnO3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

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“…Investigations which were made in IKZ in Berlin [6] show one more mechanism of twinning in ΝdGaO 3 . Due to unfavorable thermal condition in the growth assembly and to the good thermal conductivity of ΝdGaO3 crystal there arise instabilities at the interface after seeding.…”

Section: Crystal Growlh and Sample Preparalionmentioning

confidence: 99%

X-Ray Diffraction Investigations of NdGaO₃Single Crystal

et al. 1997

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Neodymium gallium perovskite single crystals grown with the Czochralski method were examined with several complementary X-ray methods. By means of X-ray diffraction topography and reciprocal space diagram the structural perfection and crystal homogeneity of the studied wafers were determined. Additionally, the results of the X-ray reflectometry investigations of the surface perfection after the mechanochemical treatment are presented.

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The problem of twinning in NdGaO3 Czochralski crystals

Cited by 20 publications

References 11 publications

Etching Figures in Neodymium Gallate and Yttrium Aluminate Crystals

Etching Figures in Neodymium Gallate and Yttrium Aluminate Crystals

Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

X-Ray Diffraction Investigations of NdGaO₃Single Crystal

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The problem of twinning in NdGaO3 Czochralski crystals

Cited by 20 publications

References 11 publications

Etching Figures in Neodymium Gallate and Yttrium Aluminate Crystals

Etching Figures in Neodymium Gallate and Yttrium Aluminate Crystals

Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

X-Ray Diffraction Investigations of NdGaO3Single Crystal

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X-Ray Diffraction Investigations of NdGaO₃Single Crystal