The present position and future status of electron beam lithography for VLSI fabrication

Matsuzaka, Takashi

doi:10.1016/s0167-9317(96)00079-2

Cited by 3 publications

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Such a method eliminates errors caused by an analog written relief and, thanks to the use of standard high contrast lithographic processes, enables the use of most of the direct e-beam writing resolution, thus leaving only the question of overlay accuracy. Fortunately, the demands involved by many types of microelectronic devices and technologies (nanoscale devices, mix and match technology) have brought about the development of electron beam exposure systems, which have the ability to perform highly accurate positioning of e-beam in respect to the previously fabricated pattern [21,22]. During an alignment process, the electron beam is led across the marks placed on the substrate and the data required for corrected beam position are calculated from the signal of the backscattered electrons.…”

Section: Multi-step Electron Beam Lithographymentioning

confidence: 99%

Multi-step electron beam technology for the fabrication of high performance diffractive optical elements

Kowalik¹,

Góra²,

Jaroszewicz³

et al. 2005

Microelectronic Engineering

View full text Add to dashboard Cite

Section: Multi-step Electron Beam Lithographymentioning

confidence: 99%

Multi-step electron beam technology for the fabrication of high performance diffractive optical elements

Kowalik¹,

Góra²,

Jaroszewicz³

et al. 2005

Microelectronic Engineering

View full text Add to dashboard Cite

Comparative study of AZPN114 and SAL601 chemically amplified resists for electron beam nanolithography

Cui

Gerardino²,

Gentili³

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested in Electron induced chemical nanolithography with self-assembled monolayersElectron-beam nanolithography, acid diffusion, and chemical kinetics in SAL-601With the minimum feature dimension of integrated circuits ͑ICs͒ shrinking to below 130 nm, the IC industry has to choose one among a number of nonoptical lithography tools. Electron beam direct write or mix-and-match lithography is an attractive choice because of the maturity of the technology and the potential of using the tool for several generations of ICs. The low throughput associated with e-beam direct writing of wafers can be significantly reduced by using chemically amplified resists. Two commercially available negative tone chemically amplified resists, AZPN114 and SAL601, were investigated and compared for their performance in e-beam direct writing of wafers at 150, 100, and sub-50 nm resolutions. A number of factors influencing the throughput issue were evaluated. The latitudes of postexposure bake and postexposure delay were compared. It is found that both resists are of high resolution and high contrast, with the highest resolution, 30 nm, achieved for AZPN114. AZPN114 has higher sensitivity and is more stable during postexposure delay than SAL601 but less stable during postexposure bake. A 6 in. industrial wafer was exposed with AZPN114 at gate level at 150 nm resolution using e-beam lithography and it showed feature uniformity across the entire wafer.

show abstract

Improved Electron-Beam/Deep-Ultraviolet Intralevel Mix-and-Match Lithography with 100 nm Resolution

Magoshi¹,

Niiyama²,

Sato³

et al. 1999

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We have developed a novel electron-beam (e-beam)/deep-ultraviolet (DUV) intralevel mix-and-match (ILM&M) lithography as a production-viable technology. The main feature of the ILM&M lithography is its use of a DUV biased exposure method for increased throughput and a combination of a variably shaped e-beam/character projection writer with a step-and-repeat DUV scanning system for accurate intralevel butting between e-beam and DUV patterns. It was demonstrated that the throughput of e-beam writing in the ILM&M lithography could reach about three times that of e-beam lithography, and that an intralevel butting accuracy of less than 50 nm could be achieved. The proposed ILM&M has been successfully applied to the development and early production of leading edge devices at our laboratory.

show abstract

The present position and future status of electron beam lithography for VLSI fabrication

Cited by 3 publications

References 4 publications

Multi-step electron beam technology for the fabrication of high performance diffractive optical elements

Multi-step electron beam technology for the fabrication of high performance diffractive optical elements

Comparative study of AZPN114 and SAL601 chemically amplified resists for electron beam nanolithography

Improved Electron-Beam/Deep-Ultraviolet Intralevel Mix-and-Match Lithography with 100 nm Resolution

Contact Info

Product

Resources

About