Improved Electron-Beam/Deep-Ultraviolet Intralevel Mix-and-Match Lithography with 100 nm Resolution

Magoshi, Shunko; Niiyama, Hiromi; Sato, S.; Kato, Yasuki; Watanabe, Yumi; Shibata, Tsugumichi; Ito, Masamitsu; Ando, Atsushi; Nakasugi, Tetsuro; Sugihara, Kazuyoshi; Okumura, Katsuya

doi:10.1143/jjap.38.2169

Cited by 6 publications

(4 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, to avoid pattern disconnection, in the case of | E| ≤ L, only parallel overlaps are necessary; in the case of | E| > L, parallel overlaps and perpendicular overlaps are needed. In the previous work, 7) only the case of | E| ≤ L was discussed.…”

Section: Pattern Data Preparationmentioning

confidence: 99%

“…Magoshi et al 7) reported another method to obtain EB data with parallel overlaps. However, overlaps cannot be added to the gates with L ≤ W because they disappear after pattern preparation using their method.…”

Section: Pattern Data Preparationmentioning

confidence: 99%

“…[2][3][4][5][6][7][8] It combines EBDW and DUV lithographic processes. The usual (inter-level) mix-and-match lithography also combines EBDW and DUV lithographies, but in this technique they are used to separately expose the different layers.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Narihiro¹,

Wakabayashi²,

Ueki³

et al. 2000

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

To increase the throughput of electron beam lithography used to fabricate sub-100-nm patterns, we developed an electron beam and deep UV intra-level mix-and-match lithography process, that uses the JBX-9300FS point-electron-beam system and a conventional KrF stepper. Pattern data preparation was improved for sub-100-nm patterns. To reduce the effect of line width variation caused by post-exposure delay on complementary metal-oxide-semiconductor (CMOS) devices, we first exposed KrF patterns and then added another post-exposure bake before the electron beam (EB) exposure. We have used this technique to expose the gate layer of sub-100-nm CMOS devices. When we set the threshold size between EB and KrF patterns at 0.16 µm, the throughput of electron beam lithography was about threefold that of the full exposure by the electron beam lithography process. Sub-50-nm CMOS devices with high drive current were successfully fabricated.

show abstract

Section: Pattern Data Preparationmentioning

confidence: 99%

Section: Pattern Data Preparationmentioning

confidence: 99%

See 1 more Smart Citation

Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Narihiro¹,

Wakabayashi²,

Ueki³

et al. 2000

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…This approach enables users to benefit from the complementary advantages of both techniques for complex layout exposures. In contrast the term intra-level Mix and Match (ILM&M) approach [3,4] (also known as hybrid lithography in literature [5]), is used for the pattern exposure of different lithographic tools in the same resist layer. The ILM&M approach has the advantage of shortening the lithographical process, because it lacks the necessity of a second resist layer and its processing.…”

Section: Introductionmentioning

confidence: 99%

Lithographic performance of resist ma-N 1402 in an e-beam/i-line stepper intra-level mix and match approach

SCHMIDT

Heldt²,

Helke³

et al. 2022

37th European Mask and Lithography Conference

View full text Add to dashboard Cite

In this paper, we describe a lithographic technique of exposing complex patterns with an advanced resist processing that connects the high resolution of electron beam lithography and the fast exposure of optical i-line stepper lithography via an Intra Level Mix and Match (ILM&M) approach. The key element of our approach is that we use two successive exposures on one single resist layer directly followed by a single resist development. Process and resist characterization of negative tone resist ma-N 1402 as well as a resolution study for each lithographic tools involved. Lithographic performance of negative tone resist ma-N 1402 has shown structures with dimensions of 55 nm with 300 nm pitch for ebeam lithography (VISTEC SB254, shaped beam) and 350 nm structures for i-line stepper (Nikon NSR 2205i11D). Resist footing problem in structures exposed by i-line stepper is solved by introducing a 200 nm thick bottom antireflective coating AZ BARLI II in ILM&M resist processing sequence. A general processing recipe for electron beam/i-line stepper ILM&M with negative tone resist ma-N 1402 is successfully developed and patterns with different dimensions ranging from sub 100 nm to µm scale were reproducibly fabricated on the same resist layer.

show abstract

Combined e-beam lithography using different energies

Krátký

Kolařík

Horáček

et al. 2017

Microelectronic Engineering

View full text Add to dashboard Cite

Improved Electron-Beam/Deep-Ultraviolet Intralevel Mix-and-Match Lithography with 100 nm Resolution

Cited by 6 publications

References 10 publications

Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Lithographic performance of resist ma-N 1402 in an e-beam/i-line stepper intra-level mix and match approach

Combined e-beam lithography using different energies

Contact Info

Product

Resources

About