The preparation of thin ordered transition metal oxide films on metal single crystals for surface science studies

Vurens, G.H.; Salmerón, Miquel; Somorjai, Gábor A.

doi:10.1016/0079-6816(89)90006-3

Cited by 40 publications

(22 citation statements)

References 49 publications

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“…Over the last few years, several complementary approaches have been used to gain further insight into the microscopic structure of such interfaces. Experimentally, either thin oxide films are grown on a metallic support [1][2][3] or vice versa metal atoms are deposited on an oxidic surface, where they aggregate to clusters 4,5 or form thin films. Alternatively, metal clusters can be deposited carefully on the oxide surface ͑''soft landing''͒.…”

Section: Introductionmentioning

confidence: 99%

Modeling oxide-metal interfaces from density-functional theory: Platinum adsorption on tetragonal zirconia

Eichler

2003

Phys. Rev. B

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A density-functional-theory-͑DFT-͒ based method for the description of metal-oxide interfaces is presented. By superposition of the potential energy surface ͑PES͒ of an isolated metal atom on the oxide surface, predictions can be made for the optimal adsorption mode of arbitrary metal structures. The scheme is tested first for the adsorption of small Pt clusters on a tetragonal zirconia surface. There good agreement with a DFT-calculated PES for the cluster is achieved. The same cluster configuration is investigated for yttriumstabilized zirconia, too, for which stronger bonding is predicted. Further, the scheme is applied for a Pt film on the same surface, where a complicated ͱ7ϫͱ7 Pt structure on a c(2ϫ2) oxide structure is predicted, in excellent agreement with experimental data.

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Section: Introductionmentioning

confidence: 99%

Modeling oxide-metal interfaces from density-functional theory: Platinum adsorption on tetragonal zirconia

Eichler

2003

Phys. Rev. B

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“…In spite of this impact, studies on oxide/oxide interfaces have been scarce in the literature until the appearance of several works on oxide surfaces in the early 1990s. [11][12][13][14] In these works, the authors proposed the growth of thin oxide films on a conductive support in order to avoid charging problems during the characterization of the oxides. Since then, many works on oxide thin films have been done using different characterization techniques, in particular, x-ray and electron spectroscopies.…”

Section: Introductionmentioning

confidence: 99%

Interface effects in theNi2px-ray photoelectron spectra of NiO thin films grown on oxide substrates

et al. 2008

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We report the Ni 2p x-ray photoelectron spectra of NiO thin films grown on different oxide substrates, namely, SiO 2 , Al 2 O 3 , and MgO. The main line of the Ni 2p spectra is attributed to the bulk component, and the shoulder at 1.5 eV higher binding energies to the surface component. The spectra of the NiO thin films show strong differences with respect to that of bulk NiO. The energy separation between the main peak and the shoulder increases with the substrate covalence. This indicates the strong covalent interactions between the NiO thin films and the oxide substrates, and reflects changes in the bonding at the interface from a more ionic to a more covalent interaction. These conclusions are supported by cluster model calculations with a reduced O 2p-Ni 3d hybridization.

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“…Several reviews dealing with metal-oxide and oxideoxide interfaces have been reported. [2][3][4][5][6] In particular, the TiO 2 -SiO 2 interface has been studied in connection with optical multilayers of these materials used for modulation of the refractive index in optical coatings. 7 Other characterization studies of this interface include X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES).…”

Section: Introductionmentioning

confidence: 99%

Crystal-Field Effects at the TiO₂−SiO₂ Interface As Observed by X-ray Absorption Spectroscopy

et al. 2000

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The electronic structure of the TiO2-SiO2 interface has been investigated using X-ray absorption spectroscopy (XAS). TiO2 overlayers have been grown on two substrates, amorphous SiO2 and highly oriented pyrolytic graphite (for comparison), by evaporation of Ti in an oxygen atmosphere at room temperature. The evaporation rate was low enough to allow a detailed study of the early stages of growth, i.e., the submonolayer regime (θ < 1). The Ti 2p XAS spectra of the TiO2 overlayers have been measured for different coverages. The spectra corresponding to the submonolayer regime show an unusual shape not reported up to now. A comparison with existing atomic multiplet calculations indicates a significant decrease of the crystal field (≈0.7 eV) as compared with bulk TiO2 (≈1.7 eV) due to strong electronic interactions at the interface. The presence of the SiO2 substrate and the covalent character of the Si-O bonds lowers the crystal field of the TiO2 overlayer at the interface. In contrast, the graphite substrate inhibits the total oxidation of the overlayer forming Ti2O3. XAS has proved to be a useful experimental tool for the study of the electronic structure of interfaces.

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The preparation of thin ordered transition metal oxide films on metal single crystals for surface science studies

Cited by 40 publications

References 49 publications

Modeling oxide-metal interfaces from density-functional theory: Platinum adsorption on tetragonal zirconia

Modeling oxide-metal interfaces from density-functional theory: Platinum adsorption on tetragonal zirconia

Interface effects in theNi2px-ray photoelectron spectra of NiO thin films grown on oxide substrates

Crystal-Field Effects at the TiO₂−SiO₂ Interface As Observed by X-ray Absorption Spectroscopy

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The preparation of thin ordered transition metal oxide films on metal single crystals for surface science studies

Cited by 40 publications

References 49 publications

Modeling oxide-metal interfaces from density-functional theory: Platinum adsorption on tetragonal zirconia

Modeling oxide-metal interfaces from density-functional theory: Platinum adsorption on tetragonal zirconia

Interface effects in theNi2px-ray photoelectron spectra of NiO thin films grown on oxide substrates

Crystal-Field Effects at the TiO2−SiO2 Interface As Observed by X-ray Absorption Spectroscopy

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Crystal-Field Effects at the TiO₂−SiO₂ Interface As Observed by X-ray Absorption Spectroscopy