We compare the electronic structure of differently fluorinated copper phthalocyanines (CuPC, CuPCF4, and CuPCF16) using x-ray photoemission spectroscopy and valence-band ultraviolet photoemission spectroscopy. Whereas the ionization potential (IP) is increased by more than 1 eV as a function of the degree of fluorination, further electronic properties such as the optical gap or the composition of the highest occupied molecular orbital and lowest unoccupied molecular orbital remain nearly unchanged. This fact renders these compounds an ideal tool for the investigation of the influence of the IP on the interface properties. At the interface to gold, besides interface dipoles we observe both downward and upward band bending. These phenomena depend clearly on the IP of the phthalocyanines.

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We report the infrared (IR) response of bulk samples of multiwalled boron nitride nanotubes, produced by a substitution reaction from single walled carbon nanotubes, which is dominated by two characteristic BN-vibrations at 800 and 1372 cm-1.

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We report a detailed experimental and theoretical study on the electronic and optical properties of highly boron-substituted (up to 15 at.%) single-wall carbon nanotubes. Core-level electron energy-loss spectroscopy reveals that the boron incorporates into the lattice structure of the tubes, transferring ϳ1 / 2 hole per boron atom into the carbon derived unoccupied density of states. The charge transfer and the calculated Fermi-energy shift in the doped nanotubes evidence that a simple rigid-band model can be ruled out and that additional effects such as charge localization and doping induced band-structure changes play an important role at this high doping levels. In optical absorption a new peak appears at 0.4 eV which is independent of the doping level. Compared to the results from a series of ab initio calculations our results support the selective doping of semiconducting nanotubes and the formation of BC 3 nanotubes instead of a homogeneous random boron substitution.

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