The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor deposition

Biefeld, R. M.

doi:10.1016/0022-0248(86)90035-7

Cited by 94 publications

(37 citation statements)

References 21 publications

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“…An established thermodynamic model, first applied to InAsSb by Biefeld 18 and similar to that used by Fukui and Horikoshi 19 fits well to the measured compositions of the epilayers ͓Fig. 3͑a͔͒ ͑dashed line͒.…”

Section: Enhanced Sb Incorporation In Inassb Nanowires Grown By Metalmentioning

confidence: 65%

Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

Borg

Dick

Eymery

et al. 2011

Applied Physics Letters

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We demonstrate metalorganic vapor phase epitaxy of InAs1−xSbx nanowires (x=0.08–0.77) for applications in high-speed electronics and long-wavelength optical devices. The composition of the InAsSb nanowires and InAsSb epilayers on the same sample is independently determined using lab-setup high resolution x-ray diffraction, by making use of the size-dependent in-plane broadening of the nanowire Bragg peak. We find that the incorporation of Sb into the nanowires is significantly higher than for planar epitaxy under the same growth conditions. Thermodynamic calculations indicate that this is due to a dramatically decreased effective V/III ratio at the particle/nanowire interface.

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Section: Enhanced Sb Incorporation In Inassb Nanowires Grown By Metalmentioning

confidence: 65%

Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

Borg

Dick

Eymery

et al. 2011

Applied Physics Letters

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“…Therefore the material also promises significant potential for high-speed device applications. There is particular interest in the alloy composition corresponding to x ¼ 0.09 [4], which is lattice matched to GaSb substrates and which corresponds to a room temperature energy gap of approximately 4.2 mm, appropriate to cover the atmospheric window in the wavelength range of 3-5 mm, where minimum absorption is present.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of undoped and doped MOVPE-grown InAsSb

Krug

Botha

Shamba

et al. 2007

Journal of Crystal Growth

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“…The melting point of InSb is only 524"C. At growth temperatures this low, the cost for a run may be rnacceptably high because the precursors, especially the comm nly-used Sb precursor trimethylantimony ((CH3)3Sb), cannot efficiently decompose [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Decomposition studies of triisopropylantimony and triallylantimony

Larsen

Stringfellow

et al. 1991

JEM

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The pyrolysis of triisopropylantimony ((C3H7)3Sb) and triallylantimony ((C3H5)3Sb) has been investigated massspectrometrically in He and D2 using an Si02 flow tube reactor at atmospheric pres uri.. Both temperature and time dependencies of percent decomposition were studied and the reaction products were analyzed. The overall decomposition processes for both compounds were found to be homogeneous and first order. (C3H7)3Sb pyrolyzes at 250-350 0 C with no effect of the ambient gas. However, C3H6, C3H8, and C6H14 (2,3-dimethylbutane) were produced in He whereas C3H7D appeared in D2. The pyrolysis is believed to begin via bond cleavage to generate the free C3H7 radicals that, in turn, recombine and disproportionate. Isopropyl radicals react slowly with D2, producing the C3H7D detected. For (C3H5)3Sb, the pyrolysis takes place at 100-160 0 C. The only major product is C6HI0 (1,5-hexadiene). Both the pyrolysis rate and products were independent of the ambient. Two possible mechanisms, homolysis and reductive coupling, are discussed. Assuming that homolysis is the rate-limiting step for the pyrolysis of both (C3H7)3Sb and (C3H5)3Sb, bond strengths of 30.8 and 21.6 kcal/mole for C3H7-Sb and C3H5-Sb were determined from the experimental data. When either (C3H7)3Sb or (C3H5)3Sb was mixed with trimethylindium, a nonvolatile, liquid material, probably an adduct, was formed.

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The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor deposition

Cited by 94 publications

References 21 publications

Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

Electrical properties of undoped and doped MOVPE-grown InAsSb

Decomposition studies of triisopropylantimony and triallylantimony

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