The Preparation and Properties of Arsenic‐Doped Tin Oxide Films

Hsu, Yar‐Sun; Ghandhi, S. K.

doi:10.1149/1.2130539

Cited by 29 publications

(12 citation statements)

References 4 publications

(5 reference statements)

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“…25 The activated conductivity of these compounds is determined by the transition of the electron from the donor band to the conduction zone. This is in agreement with the experimental data which show that arsenic and tungsten atoms do not significantly effect the conductivity in SnO 2 [25,26]. The metallic type of conductivity, according to our calculations, is observed for Sn 0.75 Sb 0.…”

Section: Results Of Calculations and Discussionsupporting

confidence: 93%

Electronic structure, chemical bonding and properties of Sn1−xMxO2, M=As, Sb, Bi, V, Nb, Ta (0.0⩽x⩽0.25)

Zaĭnullina

2007

Physica B: Condensed Matter

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Section: Results Of Calculations and Discussionsupporting

confidence: 93%

Electronic structure, chemical bonding and properties of Sn1−xMxO2, M=As, Sb, Bi, V, Nb, Ta (0.0⩽x⩽0.25)

Zaĭnullina

2007

Physica B: Condensed Matter

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“…In the case of SnO2:Sb films, the growth rate passes through a minimum at a molar ratio of 0.15. Catalytic effects of dopants on the growth rate of semiconductors have already been reported (14,15). For example, B2H, increases the growth rate of Si deposited by pyrolysis of Sill,, but AsH3 acts as a catalytic poison by impeding the adsorption of silane on the growing film.…”

Section: Resultsmentioning

confidence: 99%

Thickness Dependence of Transport Properties of Doped Polycrystalline Tin Oxide Films

Bélanger

Dodelet

Lombos

et al. 1985

J. Electrochem. Soc.

100

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Tin oxide films were deposited by chemical vapor deposition on borosilicate and fused silica substrates using dibutyltin diacetate (DBTD) as tin feedstock and SbC]5 or CC13-CF3 as dopants. The film growth rate was measured as a function of dopant/DBTD ratio, temperature, and film thickness. Scanning electron microscopy and x-ray diffraction spectra of the films were used to determine the grain sizes and the preferential orientations of the crystallites in the film as a function of film thickness. Optical and electrical properties were measured. A model is proposed to elucidate the variation of transport properties of doped SnO2 as a function of film thickness. It could be shown with this model that the thickness dependence of the conductivity of doped SnO2:Sb and SnO2:F films could be analyzed in terms of carrier concentration taking into consideration deep-level compensation. The number of carriers is decreased by electron trapping at Sb(III) or Sn(II) surface states when antimony or fluorine are used as dopant, respectively. The model based on results of the literature related to a single crystal with (110) orientation is extended in this work to other crystallite orientations. The present analysis indicates that deep levels appear only on the grain boundary surfaces with (110), (211), and (301) orientations, and not on the (200) and (400) ones. The concentration of free carriers can be calculated on the basis of x-ray diffraction spectra indicating an estimate of the relative fraction of the crystallites with each orientation as a function of the film thickness. The conductivities of the films can be computed using this model and taking a single value for the electron mobility of 19 cm 2 (V-s) -1 for all film thicknesses and a total donor concentration of 2 • 102~ cm -3. All the obtained experimental data can be accounted for exclusively on the basis of film-thicknessdependent carrier concentration.

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“…Nevertheless, when doped with Ar, B, Bi, F, P, or Sb, its conductivity increases considerably [1][2][3][4][5][6]. There have also been attempts to use less common elements as doping agents, like Ir, Rh, and various lanthanides [7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Anodic oxidation of organic pollutants on a Ti/SnO2–Sb2O4 anode

2011

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A Ti/SnO 2 -Sb 2 O 4 electrode was prepared by alternate Sn and Sb electrodepositions using the thermoelectrochemical method. The chemical, electrochemical, and structural characterization of the electrode was performed and it was tested in the anodic oxidation of several pollutants, phenol, ibuprofen, acid orange 7 (AO7), and diclofenac, all in aqueous 0.035 M Na 2 SO 4 solutions at current densities of 10 and 20 mA cm -2 . After the 24 h assay, removal of chemical oxygen demand, total organic carbon (TOC) and absorbance were very high, especially at the higher current density. TOC removals presented the lowest value. However, after 24 h at 20 mA cm -2 , TOC removals were: phenol-94%; ibuprofen-83%; AO7-88%; and diclofenac-73%. Combustion efficiency and instantaneous and mineralization current efficiencies were also determined.

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The Preparation and Properties of Arsenic‐Doped Tin Oxide Films

Abstract: not Available.

Cited by 29 publications

References 4 publications

Electronic structure, chemical bonding and properties of Sn1−xMxO2, M=As, Sb, Bi, V, Nb, Ta (0.0⩽x⩽0.25)

Electronic structure, chemical bonding and properties of Sn1−xMxO2, M=As, Sb, Bi, V, Nb, Ta (0.0⩽x⩽0.25)

Thickness Dependence of Transport Properties of Doped Polycrystalline Tin Oxide Films

Anodic oxidation of organic pollutants on a Ti/SnO2–Sb2O4 anode

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