1992
DOI: 10.1149/1.2069096
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The Point Defect Model for the Passive State

Abstract: A review is presented of the point defect model (PDM) for the growth and breakdown of passive films on metal and alloy surfaces in contact with aqueous solutions. The model provides a reasonable account of the steady-state properties of cation-conducting and anion-conducting barrier layers on nickel and tungsten, respectively, in phosphate buffer solutions; of the impedance characteristics of passive films on nickel; of the breakdown of passive films on a wide range of metals and alloys; of the distributions i… Show more

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Cited by 1,293 publications
(940 citation statements)
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“…These vacancies are generated by chloride ions adsorption and diffuse from the film/solution interface across the film, towards the film/metal interface. If diffusion is slowed down, the vacancies condensate cannot reach the critical size at the film/metal interface, preventing pitting [44][45][46]. Along the same line, the slight increment in the R t values in the presence of phosphate ions could be explained as the result of changes in composition which influence the electronic properties of the surface layers and could, in turn, affect the mass transfer of oxygen and/or cation vacancies.…”
Section: Of 43mentioning
confidence: 98%
“…These vacancies are generated by chloride ions adsorption and diffuse from the film/solution interface across the film, towards the film/metal interface. If diffusion is slowed down, the vacancies condensate cannot reach the critical size at the film/metal interface, preventing pitting [44][45][46]. Along the same line, the slight increment in the R t values in the presence of phosphate ions could be explained as the result of changes in composition which influence the electronic properties of the surface layers and could, in turn, affect the mass transfer of oxygen and/or cation vacancies.…”
Section: Of 43mentioning
confidence: 98%
“…All the measured Mott-Schottky plots exhibit a linear region with a positive slope, indicating that the passive films formed on these tested specimens exhibit n-type semiconductor properties. For an n-type semiconducting passive film, the parameter N q refers to donor density (N d ) in the space charge region, and the donors are usually some positively charged non-stoichiometric point defects, including oxygen vacancies and cation interstitials [50,67]. For the uncoated Ti-6Al-4V substrate and the Ti 5 Si 3 nanocrystalline coating, as shown in Fig.…”
Section: Influence Of Nb Addition On the Electronic Properties Of Pasmentioning
confidence: 99%
“…To evaluate E, we have used the Point Defect Model (PDM) 13,14,15,16 . The PDM has been developed for electrochemical experiments to interpret anodic oxide growths.…”
Section: Defect Modelmentioning
confidence: 99%
“…The iron oxidation kinetics under irradiation has been then obtained. The electric field influence in the corroded layer has been deduced using the Point Defect Model (PDM) [12][13][14][15][16] .…”
Section: Introductionmentioning
confidence: 99%