The physical properties of SnS films grown on lattice‐matched and amorphous substrates

Abstract

The development of high-quality tin monosulphide (SnS) layers is one of the crucial tasks in the fabrication of efficient SnSbased optoelectronic devices. Reduction of strain between film and the substrate by using an appropriate lattice-matched (LM) substrate is a new attempt for the growth of high-quality layers. In this view, the SnS films were deposited on LM Al substrate using the thermal evaporation technique with a low rate of evaporation. The as-grown SnS films were characterized using appropriate techniques and the obtained results are discussed by comparing them with the properties of SnS films grown on amorphous substrate under the same conditions. From structural analysis of the films, it is noticed that the SnS films deposited on amorphous substrate have crystallites that were oriented along different directions. However, the SnS crystallites grown on Al substrate exhibited epitaxial growth along the [101] direction. Photoluminescence (PL) and Raman studies reveal that the films grown on Al substrate have better optical properties than those of the films grown on amorphous substrates.

Influence of grain size on the band-gap of annealed SnS thin films

“…The absorption spectras were typical with absorption increasing near band-edge. Tin sulphide is known to have both direct band-gap [37] and indirect band-gap [5]. The band-gap can be evaluated using the absorption coefficient (α) obtained from the UV-visible spectra.…”

Ultrasound-assisted electrodeposition of SnS: Effect of ultrasound waves on the physical properties of nanostructured SnS thin films

“…The green and blue emission peaks are associated with high density of tin and sulfur vacancies and various types of impurities such as Sn interstitials[35,36]. Based on the findings published by Devika et al[37], the emission peaks at 521, 480, and 416 nm can originate from sulfur vacancies, tin interstitials, and tin vacancies, respectively. Therefore, it can be concluded that the SnS films have the potential to be used as green and blue light emitters or other devices.…”

Tin Compensation for the SnS Based Optoelectronic Devices

“…SnS films can be synthesized by various techniques, such as chemical vapor deposition56, thermal evaporation78, sputtering9, and atomic layer deposition10. However, the SnS films prepared by the methods above typically exhibit disordered growth orientations in addition to a polycrystalline structure, resulting in significant material defects arising from high concentration of pinholes and grain boundaries811.…”