The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs

Chen, I. K.; Chen, S. C.; Mukhopadhyay, Subhadeep; Huang, Danqiong; Lee, J. H.; Tsai, Y. S.; Lu, Ryan; He, Jun

doi:10.1109/irps.2018.8353575

2018 IEEE International Reliability Physics Symposium (IRPS) 2018

DOI: 10.1109/irps.2018.8353575

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The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs

I. K. Chen

S. C. Chen

Subhadeep Mukhopadhyay

et al.

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Cited by 11 publications

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Study of Layout effect on Gate oxide TDDB in sub-16nm FinFET technology

Liu¹,

Sun²,

Huang³

et al. 2021

2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs

Cited by 11 publications

References 16 publications

Study of Layout effect on Gate oxide TDDB in sub-16nm FinFET technology

Study of Layout effect on Gate oxide TDDB in sub-16nm FinFET technology

Comprehensive Study for OFF-State Hot Carrier Degrdation of Scaled nMOSFETs in DRAM

Utilizing a Thorough Understanding of Critical Aging and Failure Mechanisms in finFET Technologies to Enable Reliable High Performance Circuits

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