2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2021
DOI: 10.1109/ipfa53173.2021.9617259
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Study of Layout effect on Gate oxide TDDB in sub-16nm FinFET technology

Xiangyu Liu1,
Yanan Sun2,
Junlin Huang3
et al.
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