The Photoelectrochemical Oxidation of (100), (111), and (1̅1̅1̅) n ‐ InP and n ‐ GaAs

Abstract

The photoelectrochemical oxidation of (i00), (I 11), and (i 11) n-InP and n-GaAs in several acidic solutions has been investigated. Specific interactions between the single crystal semiconductors and solvent selectively revea_l_crystal faces other than those originally exposed to the solvent. The relative stability of the n-lnP faces is (111) > ( 100) > ( 111). The first case of electron injection during the photoanodic dissolution of III-V compound semiconductors has been observed with (I 00) and ( 111) n-InP. Nucleophilic attack by Cl-or Br-produce intermediates whose potential and kinetics allow electron injection into the semiconductor conduction band reducing the number of photons required for the reaction from six to four. The conditions for selectively etching smooth surfaces on (100) n-lnP are discussed in detail along with the conditions for maintaining polished surfaces on n-lnP(lll) or A-face, which is difficult with conventional chemical polishes.

Silicon Porosification: State of the Art

“…The last one testifies that anisotropy of surface reactivity is an important ingredient for porous-layer formation. 4,5,36,689,690 Therefore, the etching is anisotropic and the pore density, pore dimensions, and pore shape are determined by the doping density and the crystallographic orientation of the surface. For example, the primary pores in GaAs grow in the (111) direction which is in contrast with silicon where the pores grow in the (100) direction.…”

Photocorrosion and Film Formation of Ga ( As , P ) Electrodes: Photoelectrochemical and Surface Physical Studies

“…As C1-is known to play an important role in the decomposition process of III-V semiconductors (26) it might be supposed that stability should decrease when KC1 was added. As C1-is known to play an important role in the decomposition process of III-V semiconductors (26) it might be supposed that stability should decrease when KC1 was added.…”

Selective porosification of n-InP(100) after focused ion beam implantation of Si

“…Other research (35) described chemical etching in acid solutions and the development of a surface roughness, which gave the samples a white appearance. Work on photoelectrochemical (PEC) etching of InP described a strong surface roughness, which develops on n-type InP(100) etched in HCl solutions, whereas PEC etching in HBr and HF solutions leads to smooth (electropolished) surfaces (36). The evolution of a surface texture in PEC experiments in HCl on n-type InP(100) was confirmed and the evolution of micrometer range etch pits observed (37).…”