The phase relations in the Cu,In,Se system and the growth of CuInSe2 single crystals

Fearheiley, M. L.

doi:10.1016/0379-6787(86)90076-1

Cited by 154 publications

(53 citation statements)

References 13 publications

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“…Resolution of these crystallographic and phase boundary uncertainties is essential to testing a recent theory that this behavior results from copper electromigration limited by the occurrence of a structural transformation at those compositions [50]. The existence of such a transformation is consistent with Fearheiley's evidence (which has not been confirmed) that the compound CuIn3Se5 melts congruently [22] and the crystallographic studies by Folmer [23] that find additional reflections in XRD spectra for pseudobinary compositions of 77 mole% In2Se3 or greater. The results of a recent EXAFS study directly prove that the crystallographic structure of CuIn3Se5 (75 mole% In2Se3) is defect tetragonal, containing a high concentration of cation site vacancies [51].…”

Section: β β β β-Cis (Cu2in4se7 and Cuin3se5)supporting

confidence: 64%

“…There remains inconsistency between the various studies over the compositional range of single-phase stability in the relevant high-temperature regime. Fearheiley's phase diagram [22] posits that this phase is limited on the copper rich side by a eutectic associated with the putative compound Cu5InSe4, and stable to much higher In2Se3 mole fractions than found by Boehnke and Kühn [18], or than shown in Figure 1-1.…”

Section: δ δ δ δ-Cis (Sphalerite)mentioning

confidence: 73%

“…In this case those species are a single formula unit of the As described in the introductory paragraphs of this chapter, the indium-rich a/b-CIS two-phase boundary at STP is predicted to be at 15.35 at.% copper (X = 0.4987), corresponding almost exactly to the widely reported b-CIS compound formula Cu 2 In 4 Se 7 and the empirical two-phase boundary at STP [18,20,22,23,26,27].…”

Section: The A-cis/b-cis Phase Equilibriummentioning

confidence: 91%

“…Extension of the characterization of the Cu-In-Se ternary phase field to compositions off the Cu2Se-In2Se3 section was finally published in the 1980's by three groups [18,21,22] although there are significant discrepancies between them. Boehnke and Kühn find four phases on the indium-rich side of the pseudobinary section between the compositions of CuInSe2 and In2Se3, whereas…”

Section: The Cu-in-se (Cis) Materials Systemmentioning

confidence: 99%

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Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

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This project was initiated after the Boeing Company decided to terminate its photovoltaic research and development efforts, and donated some research equipment to UF. Billy Stanbery, who was part of the Boeing team, decided then to enroll at UF to pursue a Ph.D degree. As such these events constituted a rare direct technology transfer from industry to a university. This helped to preserve more than the published legacy of the solar cell efforts at Boeing, and jump-started a comprehensive, multifaceted, and multidisciplinary copper indium diselenide solar cell research effort at UF. 5-15 Micro-Raman scattering spectra of islands on two indium-rich CIS films grown on GaAs (100). The uppermost curve is from an island "pool" on a sodium-dosed film and the lower two are single and averaged spectra from isolated islands on the sample without sodium shown in Figure 5- field. It focused primarily on the physical and opto-electronic properties of the general class of I-III-VI2 and II-IV-V2 compound semiconductors. More recent reviews specifically oriented towards CIS materials and electronic properties [2][3][4][5][6] are also recommended reading for those seeking to familiarize themselves with key research results in this field.There are also a number of excellent books and reviews on photovoltaic device physics [7,8], on the general subject of solar cells and their applications [9,10], and others specifically oriented towards thin-film solar cells [11,12] Researchers have not always been careful to reserve the use of the compound designation CuInSe2 for single-phase material of the designated stoichiometry, an imprecision that is understandable in view of the difficulty in discriminating CuInSe2 from some other compounds in this material system, as will be discussed in detail elsewhere in this treatise. The compound designations such as CuInSe2 will be reserved herein for reference to single-phase material of finite solid solution extent, and multiphasic or materials of indeterminate structure composed of copper, indium, and selenium will be referred to by the customary acronym, in this case CIS. 3 This review begins with an overview of the physical properties of the principal copper ternary chalcogenides utilized for PV devices, including their thermochemistry, crystallography, and opto-electronic properties. All state-ofthe-art devices rely on alloys of these ternary compounds and employ alkali impurities, so the physical properties and effects of these additives will be presented, with an emphasis on their relevance to electronic carrier transport properties. This foundation will provide a basis from which to address the additional complexities and variability resulting from the plethora of materials processing methods and device structures which have been successfully employed to fabricate high efficiency PV devices utilizing absorbers belonging to this class of materials. Phase Chemistry of Cu-III-VI Material SystemsSignificant technological applications exist for Ag-III-VI2 compounds as non-linear optical mat...

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Section: β β β β-Cis (Cu2in4se7 and Cuin3se5)supporting

confidence: 64%

Section: δ δ δ δ-Cis (Sphalerite)mentioning

confidence: 73%

Section: The A-cis/b-cis Phase Equilibriummentioning

confidence: 91%

Section: The Cu-in-se (Cis) Materials Systemmentioning

confidence: 99%

See 2 more Smart Citations

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

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“…The published pseudo-binary In 2 Se 3 -Cu 2 Se phase diagram [4,5] suggests that Cu-rich ([Cu]¿[In]) compositions will exist in equilibrium as a two-phase mixture of CIGS and Cu 2 Se. Any excess Cu x Se can be detrimental to device performance due to its highly conductive nature.…”

Section: Introductionmentioning

confidence: 99%

Phase identification and AES depth profile analysis of Cu(In,Ga)Se2 thin films

et al. 2006

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This work presents results related with phase identification and study of the homogeneity in the chemical composition of Cu(In,Ga)Se 2 (CIGS) thin films grown by a chemical reaction of the precursor species evaporated sequentially on a soda-lime glass substrate, in a two or three-stage process. For that, the CIGS samples were characterized through X-ray diffraction (XRD) and Auger Electron Spectroscopy (AES) depth profile measurements, respectively. The presence of secondary phases growing superficially was identified through small angle XRD measurements. Theoretical simulation of the XRD spectra, carried out with the help of the PowderCell package, confirmed this result. The results showed that the deposition conditions affect the homogeneity of the chemical composition of the CIGS films, as well as the phase in which these films grow. In general, the samples grown in a two stage process present a mixture of the Cu(In,Ga)Se 2 phase with the secondary In 2 Se 3 and Cu 2 Se phases, whereas, the films grown in a three stage process do it, mainly, in the Cu(In,Ga)Se 2 phase with a tetragonal (chalcopyrite type) structure and better homogeneity. CIGS films with characteristics like those found for the three stage samples, have demonstrated good properties for its use as absorber layers in thin film solar cells.

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Electrical Properties of the Ordered Defect Compound CuIn3Se5

Wasim

Rincón

Marín

2002

phys. stat. sol. (a)

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The electrical properties of n and p‐type bulk samples of CuIn3Se5 have been studied in the temperature range from 80 to 300 K. From the analysis of the temperature dependence of electron and hole concentrations in the activation regime above 110 K, the activation energy and the density of states effective mass of the charge carriers are estimated to be 36 meV and 0.13me for n‐type samples, and 28 meV and 1.07me for p‐type samples, respectively. The relatively low value of the carrier concentration in n‐CuIn3Se5 and the value in p‐CuIn3Se5 being of the same magnitude as in CuInSe2 confirms that this compound is formed due to the presence of ordered arrays of electrically inactive donor–acceptor defect pairs (2 VCu1— + InCu2+). Below 110 K, the electrical conduction in the impurity band is due to nearest neighbor hopping mechanism. The relatively low magnitude of the electron mobility and its temperature dependence in the activation regime is explained by considering, in addition to the well‐established scattering processes, a mechanism that involves the scattering of the charge carriers by ordered arrays of donor–acceptor defect pairs. At lower temperatures, the variation of the mobility is explained by taking into account the theoretical model for the thermally activated nearest neighbor hopping of the charge carriers between localized states in the impurity band.

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The phase relations in the Cu,In,Se system and the growth of CuInSe2 single crystals

Cited by 154 publications

References 13 publications

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Phase identification and AES depth profile analysis of Cu(In,Ga)Se2 thin films

Electrical Properties of the Ordered Defect Compound CuIn3Se5

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