The Performances and Challenges of Today’s EB Lithography and EB-resist Materials

Saito, Masato; Ugajin, Kunihiro; Yagawa, Keisuke; Suenaga, Machiko; Kobayashi, Y.

doi:10.2494/photopolymer.27.511

Cited by 7 publications

(7 citation statements)

References 2 publications

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“…Figure 1 shows the analysis result of the acid generation ratio versus EB exposure dose. Even under the EB exposure, the experimental data matched well to the theoretical curve defined by formula (2). Thus, the generated acid contrast can be represented in formula (3), estimated by the differential of formula ( 2)…”

Section: Decomposition Characteristics Of Pagsupporting

confidence: 69%

“…In the general photo chemical reaction case, acid amount generated after exposure is represented by formula (1). Thus, the ratio of acid generation can be represented in formula (2). Here, [A] stands for the generated acid concentration from the photo acid generator after exposure.…”

Section: Decomposition Characteristics Of Pagmentioning

confidence: 99%

“…[1] EB lithography, with EB resist process, has been widely used for the advanced DUV and EUV photo mask production to obtain the fine patterning on the mask. [2] Tighter pitch size and smaller pattern feature are required on EUV mask for the next generation EUV patterning.…”

Section: Introductionmentioning

confidence: 99%

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Study of EB resist dissolution contrast and chemical blur impact on the ultimate resolution

Yamamoto

Takahashi

Nagasaki

et al. 2022

Photomask Technology 2022

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EB (electron beam) resist is widely used for the EUV (extreme ultraviolet) mask production. Tighter pitch size and smaller pattern features are required on EUV mask for the next generation EUV patterning. A novel, high dose, positive-tone chemically amplified resist (pCAR) using PHS (polyhydroxystyrene) based polymer has been developed with improved resolution performance as verified by Point-beam writer and Multi-beam mask writer (MBMW). In this study, several high dissolution contrast pCAR formulations were studied under Point-beam conditions to investigate the impact of the chemical blur and the chemical stochastics on lithographic performance. For suppressing the chemical blur in the pCAR after exposure, formulations using larger size PAG (photo acid generator) could improve the resolution performance due to reduced acid diffusivity. For reducing the chemical stochastics, higher PAG loading pCAR and the slower sensitivity pCAR were investigated. Improved resolution and LWR (line width roughness) performances were obtained by these pCAR up to approximately 200μC/cm2 under Point-beam condition. On the other hand, the lithographic performance was degraded at 270μC/cm2. Analytical results of PAG decomposition ratio by HPLC suggested the possibility that decreased acid generation contrast could degrade lithographic performance when the pCAR sensitivity is too slow. The investigation of different dissolution contrast pCAR showed that higher dissolution contrast pCAR with higher Rmax resulted in improved resolution performance. According to this study, efforts to minimize the chemical blur and stochastics, and to maximize the photoresist contrast were the key factors for designing high-performing, low sensitivity pCAR. The verification results of the ultimate resolution of the representative pCAR with 60nm film thickness were also described in this paper under MBMW and mask process conditions. HP21nm line and space pattern could be resolved without pattern collapse. The small ring pattern with a 10.5nm pattern width was nicely resolved as the smallest feature.

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Section: Decomposition Characteristics Of Pagsupporting

confidence: 69%

Section: Decomposition Characteristics Of Pagmentioning

confidence: 99%

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Study of EB resist dissolution contrast and chemical blur impact on the ultimate resolution

Yamamoto

Takahashi

Nagasaki

et al. 2022

Photomask Technology 2022

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“…However, the physical limits of mainstream optical lithography are coming and being replaced in time with the next-generation lithography (NGL) technologies such as extreme ultraviolet lithography (EUVL), electron beam lithography (EBL) and nanoimprint lithography (NIL) [1,2,3]. EBL [4] and EUVL [5] are limited mainly by the throughput and implementation costs. NIL is positioned as the most popular choice due to its inherent simplicity and low cost of operation [6,7].…”

Section: Introductionmentioning

confidence: 99%

Thin-film edge electrode lithography enabling low-cost collective transfer of nanopatterns

Goryu

Chen

et al. 2015

2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

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This paper reports a new lithography method using thin-film edge electrodes (TEEs) to collectively transfer nanopatterns by generating oxide on the substrate surface via an electrochemical reaction (ECR). Nanometric thick TEEs are formed on the sidewall of insulating stamping structures. ECR-based oxide patterns have the same width and shape as the TEEs because ECR is induced only between the conductor and the substrate. Oxide nanopatterns of 300 nm and 70 nm in width were collectively transferred on Si substrate in a millimeter-scale area.978-1-4799-7955-4/15/$31.00 ©2015 IEEE

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“…All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. Resist materials are used to obtain patterned structures of various applications, such as semiconductors, [1][2][3] displays, 4,5 light-emitting diodes, 6,7 solar cell devices, 8,9 biosensors, [10][11][12] and nanoelectro mechanical systems, 13,14 in a sequence leading to the achievement of the desired structure. Many types of patterned masks and nanoimprint templates, through which the imaging radiation is projected onto the resist material to be patterned on the substrate, have been reported for these devices.…”

mentioning

confidence: 99%

Inedible cellulose-based biomass resist material amenable to water-based processing for use in electron beam lithography

et al. 2015

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An electron beam (EB) lithography method using inedible cellulose-based resist material derived from woody biomass has been successfully developed. This method allows the use of pure water in the development process instead of the conventionally used tetramethylammonium hydroxide and anisole. The inedible cellulose-based biomass resist material, as an alternative to alpha-linked disaccharides in sugar derivatives that compete with food supplies, was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB-sensitive 2-methacryloyloxyethyl groups. A 75 nm line and space pattern at an exposure dose of 19 μC/cm2, a resist thickness uniformity of less than 0.4 nm on a 200 mm wafer, and low film thickness shrinkage under EB irradiation were achieved with this inedible cellulose-based biomass resist material using a water-based development process.

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The Performances and Challenges of Today’s EB Lithography and EB-resist Materials

Cited by 7 publications

References 2 publications

Study of EB resist dissolution contrast and chemical blur impact on the ultimate resolution

Study of EB resist dissolution contrast and chemical blur impact on the ultimate resolution

Thin-film edge electrode lithography enabling low-cost collective transfer of nanopatterns

Inedible cellulose-based biomass resist material amenable to water-based processing for use in electron beam lithography

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