The peculiarities of the low-energy ion scattering by polycrystal targets

Umarov, F. F.; Bazarbaev, N. N.; Djurabekova, Flyura

doi:10.1016/j.apsusc.2009.03.015

Cited by 2 publications

(6 citation statements)

References 14 publications

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“…As established in refs. [30,31], contrary to the scattering results on targets with direct mass ratio μ > 1 (Figure 2), in the cases with inverse mass ratio μ < 1 the smallest increase of the relative energy of Cs + scattered ions E m /E 0 with decrease of initial energy E 0 occurs for the Al target with the smallest binding energy (E b = 3.34 eV/atom; μ = 0.20). For Co, Si и Ni targets, binding energies are 4.387, 4.64, and 4.435 eV/atom, correspondingly.…”

Section: Ionscontrasting

confidence: 60%

“…The measurements of differential energy spectra and angular distributions of scattered ions were performed in experimental equipment (energy analyzer of the spherical deflector type) with high angular (Δψ ≅ 0.6 o ) and energetic (ΔE/E ≅ 1/125) resolutions and with the capability to analyze the secondary ion masses by means of time-of-flight technique [24,25]. The experimental setup includes a UHV scattering chamber with the oil-free pumping system and a base pressure in the 10 −9 Torr range.…”

Section: Methodsmentioning

confidence: 99%

“…The measured energy spectra were processed by computers for averaging of statistical fluctuations of impulse registration with the use of low-frequency digital filter of Spencer. Repeating the deflection of the voltage on the plate of energy analyzer with alteration of cleaning of the target, the impulse analyzer was functioning in the mode of accumulation, and summed spectra were registered on the display and digitally printed [24,25].…”

Section: Methodsmentioning

confidence: 99%

“…In refs. [30,31], the study of low-energy (Е 0 = 80-500 eV) Cs + and K + ions scattering on the surfaces of Ta, W, Re and Ti, V, Cr polycrystal surfaces has been performed experimentally and by means of computer simulation method for more accurate definition of the mechanism of scattering and the evaluation of an opportunity to use heavy ions scattering as a tool for surface layers analysis. The angles of incidence ψ = 55 0 and scattering θ = 70 0 correspond to the specular reflection case.…”

Section: The Low-energy Ion Scattering By a Single And Polycrystal Sumentioning

confidence: 99%

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Ion Bombardment-Induced Surface Effects in Materials

Umarov¹,

Dzhurakhalov²

2016

Radiation Effects in Materials

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This chapter deals with the experimental research and computer simulation of low-and medium-energy (E 0 = 1-30 keV) ion collisions on the surface of a solid and of the accompanying effects, namely scattering, sputtering, and surface implantation. Experimental and computer simulation studies of low-energy (Е 0 = 80-500 eV) Cs + ions scattering on Ta, W, Re target surfaces and K + ions scattering on Ti, V, Cr target surfaces have been performed for more accurate definition of mechanism of scattering, with a purpose of evaluation of use of slow ions scattering as a tool for surface layer analysis. The peculiarities of the process of correlated small angle scattering of 5-15 keV He, Ne, Ar, Kr, Xe, and Rn ions by the Cu(100), Ni(100), and V(100) single-crystal surfaces have been investigated by computer simulation. It has been shown that under these conditions the inelastic energy losses become predominant over the elastic ones. The anomalous energy losses observed experimentally at the grazing ion scattering by the single-crystal surface were explained. It has been shown by computer simulation that the peculiarities of the chain effect at direct and reverse relation of masses of colliding particles and rainbow effect at quasi-single and quasi-double scattering of ions, heavier than adatoms, lead to the appearance of characteristic peaks in the energy and angular distributions of scattered ions. Analysis of these peaks and comparison with experiment give an opportunity to control the initial stages of adsorption and identification of adsorption structures with the help of low-energy ion scattering. It has been shown that from the correlation of the experimental and calculated energy distributions of the scattered particles, one may determine a spatial extension of the isolated atomic steps on the single-crystal surface damaged by the ion bombardment. Results obtained can be also used to study short-range order in alloys undergoing ordering. Grazing ionsputtering processes of Si(001), SiC(001), and Cu 3 Au(001) surfaces at 0.5-5 keV Ne + bombardment have been studied by computer simulations. A preferential emission of Cu atoms in the case of Cu 3 Au (001) surface sputtering is observed. It was shown that in the case of grazing ion bombardment, the layer-by-layer sputtering is possible, and its optimum is observed within the small angle range of the glancing angles near the threshold sputtering angle. The peculiarities of trajectories, ranges, and energy losses of low-energy different-mass ions channeling in thin single crystals of metals and semiconductors have been thoroughly studied by computer simulation. It has been ion bombardment, elastic and inelastic energy losses, vacancy and atomic steps defects on the surface, method of layer-by-layer analysis of single-crystal surface,

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Section: Ionscontrasting

confidence: 60%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: The Low-energy Ion Scattering By a Single And Polycrystal Sumentioning

confidence: 99%

See 2 more Smart Citations

Ion Bombardment-Induced Surface Effects in Materials

Umarov¹,

Dzhurakhalov²

2016

Radiation Effects in Materials

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show abstract

“…Among the pioneering works worth mentioning there is the work of Robinson in which the binary collision approximation was used [4]. This method was also applied to analyze polycrystalline targets in program codes: MARLOWE [5], COSIPO [6], OKSANA [7], while the molecular dynamics method was used in [8].…”

Section: Introductionmentioning

confidence: 99%