The path towards a high-performance solution-processed kesterite solar cell

Mitzi, David B.; Gunawan, Oki; Todorov, Teodor K.; Wang, Kejia; Guha, Supratik

doi:10.1016/j.solmat.2010.11.028

Cited by 1,170 publications

(790 citation statements)

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“…35 In summary: CZTS samples were synthesized by solid state reaction of the constituent elements at 800 C for 24 h. The purity of the starting elements was chosen to be comparable to the purity of material used for solar PV devices. 14 The purity, as certified by the manufacturers, was Cu (99.9%), Zn (97.5%), Sn (99.85%), and S (99.5%). The dominant impurities in the Zn were listed as Fe and Pb, present in roughly equal amounts.…”

Section: Sample Preparation and Measurementsmentioning

confidence: 99%

“…12 CZTS has been identified as having a direct fundamental energy gap, with a high absorption coefficient, which is close to the maximum of the solar spectrum. 13,14 It has an additional benefit of being fabricated with a range of energy bandgaps depending on the composition of the solid solution although it must also be noted that the full compositional range is not accessible. The highest efficiency device reported to date based on this material system is 11.1% using a mixed S/Se composition for the group VI element; 15 this was produced using a solution-based hydrazine process.…”

Section: Introductionmentioning

confidence: 99%

“…16 The highest efficiency achieved with only S for group VI is 6.8%. 17 Despite the range of successful fabrication strategies for making CZTS devices, which includes sputtering, evaporation, electrodeposition, spray pyrolysis, and ink-based approaches, 14 there is a pressing need for more detailed information about the properties of crystalline CZTS. In this work, a comprehensive photoluminescence (PL) spectroscopy study of solid state grown CZTS polycrystals is reported which investigates the impact of temperature and laser excitation power.…”

Section: Introductionmentioning

confidence: 99%

“…In general, it has been considered that the presence of secondary phases, particularly when their fundamental energy gap is larger than CZTS, will be detrimental to device performance. 14 Recent work 25 has shown that this may not be the case. The presence of secondary phases at grain boundaries in polycrystalline CZTS alters the grain boundary recombination velocity potentially increasing PV conversion efficiency.…”

Section: Introductionmentioning

confidence: 99%

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Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model

Halliday

Claridge

Goodman

et al. 2013

Journal of Applied Physics

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The growth of Cu2ZnSnS4 (CZTS) polycrystals from solid state reaction over a range of compositions, including the regions which produce the highest efficiency photovoltaic devices, is reported. X-ray measurements confirm the growth of crystalline CZTS. Temperature and intensity dependent photoluminescence (PL) measurements show an increase in the energy of the main CZTS luminescence peak with both increasing laser power and increasing temperature. Analysis of the PL peak positions and intensity behavior demonstrates that the results are consistent with the model of fluctuating potentials. This confirms that the polycrystals are heavily doped with the presence of a large concentration of intrinsic defects. The behavior of the main luminescence feature is shown to be qualitatively similar over a broad range of compositions although the nature and amount of secondary phases vary significantly. The implications for thin-film photovoltaic devices are discussed.

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Section: Sample Preparation and Measurementsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model

Halliday

Claridge

Goodman

et al. 2013

Journal of Applied Physics

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“…1 Tin(II) sulfide (SnS) is among the ongoing investigated materials such as Cu 2 O, 2 Cu 2 S, 3 FeS 2 , 4,5 Cu 2 ZnSn(S x Se 1-x ) 4 , 6 and ZnSnP 2 . 7 SnS has a suitable bandgap (E g ~ 1.1 -1.5 eV), 8,9 strong optical absorption (α > 10 4 cm -1 ), 10 and proper carrier concentration ([p] ~ 10 14 -10 17 cm -3 ).…”

mentioning

confidence: 99%

Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer

Sinsermsuksakul

Hartman

Kim

et al. 2013

Applied Physics Letters

333

230

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SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device structure of soda-lime glass/Mo/SnS/Zn(O,S)/ZnO/ITO. A record efficiency was achieved for SnS-based thin-film solar cells by varying the oxygen-to-sulfur ratio in Zn(O,S). Increasing the sulfur content in Zn(O,S) raises the conduction band offset between Zn(O,S) and SnS to an optimum slightly positive value. A record SnS/Zn(O,S) solar cell with a S/Zn ratio of 0.37 exhibits short circuit current density (Jsc), open circuit voltage (Voc), and fill factor (FF) of 19.4 mA/cm2, 0.244 V, and 42.97%, respectively, as well as an NREL-certified total-area power-conversion efficiency of 2.04% and an uncertified active-area efficiency of 2.46%.

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