The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED

Chen, Z.Z.; Liu, P.; Qi, S.L.; Xu, Ke; Qin, Zhixin; Tong, Y.Z.; Yu, Tongjun; Hu, Xiao; Zhang, G.Y.

doi:10.1016/j.jcrysgro.2006.10.167

Cited by 13 publications

(9 citation statements)

References 18 publications

(21 reference statements)

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“…The ones at 365 and 564 nm are emitted from the bulk GaN. These assignations combine the above results with the electroluminescence results [15] which are also shown blue emission and green emission under current injection from 0.3 to 100 mA. The intensities of blue and green emissions decrease as the accelerated voltage increase.…”

Section: Contributedsupporting

confidence: 80%

Characterization of asymmetric GaN/InGaN multiple quantum well

Chen

Liu

et al. 2009

Phys. Status Solidi (c)

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The microstructure and electronic structure of the asymmetric GaN/InGaN multiple quantum well (MQW) light emitting diodes are characterized by transmission electron microscope (TEM), cathodoluminescence (CL) and capacitance‐voltage (C‐V) measurements. In TEM images, the asymmetric structure of InGaN/GaN MQW are observed as designed with different width of QWs and barriers, and indium content in QWs as well. In high‐resolution TEM images, the InGaN quantum wells and GaN barriers show the same lattice constant, and some degradation can be seen at the bottom of each InGaN QW. There are two emission peaks, 450 and 530 nm in CL spectrum, similar to the ones in electroluminescence spectrum. The double emission peaks are assigned to the irradiative recombination in different InGaN QWs. From the C‐V data, the apparent carrier concentration in the asymmetric MQW is calculated. There are five obvious peaks which are well explained by an energy band scheme of InGaN/GaN MQW. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributedsupporting

confidence: 80%

Characterization of asymmetric GaN/InGaN multiple quantum well

Chen

Liu

et al. 2009

Phys. Status Solidi (c)

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“…There are some techniques to characterize the light emissions from InGaN microstructures [ 5 , 37 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 ]. Confocal micro-PL (μPL) has been used to obtain emission mapping with the spatial resolution of about 200 nm [ 5 , 48 , 49 ].…”

Section: Introductionmentioning

confidence: 99%

“…STL measurement requires a very thin p-GaN capping layer, which is not convenient to characterize the full structure of green LEDs. Another popular nanoscale luminescent measurement is the cathodoluminescence (CL) technique [ 47 , 52 , 53 , 54 ]. In CL mapping, a spectrum is recorded for each position of the electron beam, hence building a hyper-spectral map.…”

Section: Introductionmentioning

confidence: 99%

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array

et al. 2022

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Nanorod array and planar green-emission InGaN/GaN multi-quantum well (MQW) LEDs were fabricated by lithography, nano-imprinting, and top–down etching technology. The defect-pinning effect of the nanostructure was found for the first time. The ratio of the bright regions to the global area in the panchromatic CL images of green MQW samples increased from 30% to about 90% after nano-fabrication. The overall luminous performance significantly improved. Throughout temperature-dependent photoluminescence (TDPL) and time-resolved PL (TRPL) measurements, the migration and recombination of carriers in the MQWs of green LEDs were analyzed. It was proved that nanostructures can effectively prevent carriers from being captured by surrounding nonradiative recombination centers. The overall PL integral intensity can be enhanced to above 18 times. A much lower carrier lifetime (decreasing from 91.4 to 40.2 ns) and a higher internal quantum efficiency (IQE) (increasing from 16.9% to 40.7%) were achieved. Some disputes on the defect influence were also discussed and clarified.

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“…The layer is followed by active layer that act as photon emission region in the LED structure. Some researchers report on the InGaN quantum well (QW) [14,15] and InGaN/GaN multi quantum well (MQW) [16][17][18] LEDs with different structural, optical and electrical characteristics.…”

Section: Introductionmentioning

confidence: 99%

Structural properties of InGaN-based light-emitting diode epitaxial growth on Si (111) with AlN/InGaN buffer layer

Ali

Shuhaimi

Hassan

2012

2012 IEEE 3rd International Conference on Photonics

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This paper reports on structural characterization of InGaN-based light-emitting diode (LED) with AlN/InGaN buffer layer, AlN/GaN multi layer (ML) intermediate layer and AlGaN/GaN strain layer superlattices (SLS). The LED was epitaxially grown on Si (111) by metal organic chemical vapor deposition (MOCVD) that comprises of InGaN/InGaN multi quantum-wells (MQWs) active layer sandwiched between InGaN under-layer and over-layer. Phase analysis (PA) 2Thetascan x-ray diffraction (XRD) proved the existence of single crystal GaN (0002) and (0004) at 34.5 o and 73.2 o , respectively. X-ray rocking curve (XRC) phi-scan showed six-fold symmetric diffraction peaks confirming the wurtzite GaN structures with consistent angular gaps of ~60 o . The red shift of E 2 (high) GaN with respect to the standard value of strain-free bulk GaN denotes the presence of compressive strain in the epilayer.Surface morphology by atomic force microscope (AFM) shows a smooth surface with low RMS roughness value, thus proved a good quality of InGaN-based LED structure grown on Si.

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The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED

Cited by 13 publications

References 18 publications

Characterization of asymmetric GaN/InGaN multiple quantum well

Characterization of asymmetric GaN/InGaN multiple quantum well

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array

Structural properties of InGaN-based light-emitting diode epitaxial growth on Si (111) with AlN/InGaN buffer layer

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