The origin of double peak electric field distribution in heavily irradiated silicon detectors

A double junction model of irradiated silicon pixel sensors for LHC

“…3(a-c) and (d-g) [10]. Additionally, the electron and hole trapping rates, G e and G h , are uncertain at the 30% level due to the fluence uncertainty and possible annealing of the sensors.…”

“…The model, similar to one proposed in Ref. [10], is based on the Shockley-Read-Hall statistics and produces an effective space charge density r eff from the trapping of free carriers in the leakage current. The effective charge density is related to the occupancies and densities of traps as follows:…”

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

“…The model, similar to one proposed in Ref. [12], is based on the Shockley-Read-Hall (SRH) statistics and produces an effective space charge density r eff from the trapping of free carriers in the leakage current. The effective charge density is related to the occupancies and densities of traps as follows: (1) where N D and N A are the densities of donor and acceptor trapping states, respectively; f D and f A are the occupied fractions of the donor and acceptor states, respectively, and r dopants is the charge density due to ionized dopants (describes the resistivity of the material before irradiation).…”

Evidence of Dopant Type-Inversion and Other Radiation Damage Effects of the CDF Silicon Detectors

“…However, there is a simple way to model the space charge distributions if we make a simplification (and, unfortunately, a reduction of the possibilities for the satisfying functions): instead of considering the space charge distribution as linear along z-axis (Eremin et. al) [81] we may model it with a cosine function 4 y(z) = −cos(z) − C 1 , being C 1 a positive constant (Fig. D.5).…”