A double junction model of irradiated silicon pixel sensors for LHC

Chiochia, V.; Swartz, M.; Allkofer, Y.; Bortoletto, D.; Cremaldi, L.; Cucciarelli, S.; Dorokhov, A.; Hörmann, Ch.; Kim, D.; Konecki, M.; Kotlinśki, D.; Prokofiev, K.; Regenfus, C.; Rohe, T.; Sanders, D. A.; Son, Seunghee; Speer, T.

doi:10.1016/j.nima.2006.05.199

Cited by 22 publications

(27 citation statements)

References 7 publications

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“…the electric field is negligible. An interesting feature is an increase of the high electric field close to the back implant and to the trench: this is a known effect called double peak (DP) [21]. The fact that it is accounted for by our simulation supports the reliability of the simulation itself.…”

Section: Electric Field Distributionsupporting

confidence: 68%

Development of edgeless n-on-p planar pixel sensors for future ATLAS upgrades

Bomben

Bagolini

Boscardin

et al. 2013

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tThe development of n-on-p ''edgeless'' planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the ''active edge'' technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of 1 Â 10 15 n eq =cm 2 comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb À 1 ) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.

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Section: Electric Field Distributionsupporting

confidence: 68%

Development of edgeless n-on-p planar pixel sensors for future ATLAS upgrades

Bomben

Bagolini

Boscardin

et al. 2013

Nuclear Instruments and Methods in Physics Research Section A:

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“…Investigations of the electric field profile in the bulk of irradiated silicon sensors have shown that the electric field is no longer linear with the bulk depth after irradiation (see, for example, Refs. [43,44]). Irradiated planar sensors with non-linear profiles are simulated using the Chiochia model [44], implemented in the Silvaco TCAD package [42,45].…”

Section: Simulation Detailsmentioning

confidence: 99%

“…There is no known recipe to include the annealing effects presented in Section 3.2 in TCAD-based predictions. One challenge for incorporating annealing effects is that both the Hamburg and TCAD models are motivated by multiple effective traps [11,43,44] and the effective states are not in one-to-one correspondence (in particular, no cluster defects are directly reproduced by TCAD simulations). In addition to this, the relative abundance of the measured acceptor-like traps changes with annealing.…”

Section: Effective Modelling Of Annealing Effects In Tcad Simulationsmentioning

confidence: 99%

Modelling radiation damage to pixel sensors in the ATLAS detector

Aaboud¹,

Aad

Abbott

et al. 2019

J. Inst.

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The ATLAS Collaboration Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10 15 1 MeV n eq /cm 2 , while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 15 1 MeV n eq /cm 2 ).

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“…This change is due to defects that act as permanent acceptors. There is however a second effect that is also very important: there is experimental evidence [14], supported by simulation studies [15], that the leakage current fills traps in the bulk (i.e. electrons and holes are trapped in the defects of the bulk) changing the doping profile.…”

Section: Pos(ifd2015)026mentioning

confidence: 99%